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부품번호 | 20PT 기능 |
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기능 | Stansard SCRs | ||
제조업체 | nELL | ||
로고 | |||
전체 5 페이지수
SEMICONDUCTOR
20PT Series RRooHHSS
Stansard SCRs, 20A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
20
600 to 1000
3 to 25
Unit
A
V
mA
A
KAG
K AG
TO-220AB (Non-lnsulated)
(20PTxxA)
TO-220AB (lnsulated)
(20PTxxAI)
DESCRIPTION
The 20PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(20PTxxH)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
TC=100°C
TC=80°C
TC=100°C
TC=80°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
20
13
200
220
200
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 5
SEMICONDUCTOR
20PT Series RRooHHSS
Fig.5 Relative variation of gate trigger
current, holding current and latching
current and latching current versus
junction temperature.
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
lGT
1.5
1.0 IH & IL
0.5
TJ(°C)
0.0
-40 -20 0
20 40
60 80 100 120 140
Fig.6 Surge peak on-state current versus
number of cycles.
ITSM (A)
200
180
160
140 Non repetitive
120 Tj initial = 25°C
100 Repetitive
Tcase = 100 °C
80
tp=20ms
One cycle
60
40
20 Number of cycles
0
1 10 100 1000
Fig.7 Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and corresponding
values of l2t
2000
1000
lTSM
Tj initial = 25°C
100
dl/dt
limitattion
l2t
10
0.01
tp(ms)
0.10
1.00
10.00
Fig.8 On-state characteristics (maximum
values)
200
100
Tj max.:
Vto = 0.77V
Rd = 23mΩ
Tj max
10
Tj = 25°C
1 VTM(V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Fig.9 Thermal resistance junction to ambient
versus copper surface under tab
(epoxy printed circuit board Fr4,
copper thickness:35 µm)(D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10 S(cm2)
0
0 4 8 12 16 20 24 28 32 36 40
www.nellsemi.com
Page 4 of 5
4페이지 | |||
구 성 | 총 5 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |