|
|
PDF 25PT Data sheet ( Hoja de datos )
| Número de pieza | 25PT | |
| Descripción | Stansard SCRs | |
| Fabricantes | nELL | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 25PT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SEMICONDUCTOR
25PT Series RRooHHSS
Stansard SCRs, 25A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
25
600 to 1200
4 to 40
Unit
A
V
mA
A
K AG
K AG
TO-220AB (Non-lnsulated)
(25PTxxA)
TO-220AB (lnsulated)
(25PTxxAI)
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(25PTxxH)
TO-220F (ITO-220AB)
(25PTxxAF)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated/TO-220F
TO-263/TO-220AB
TO-220AB insulated/TO-220F
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=100°C
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
25
16
300
314
450
50
4
10
1
600 to 1200
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 6
1 page  
SEMICONDUCTOR
25PT Series RRooHHSS
Fig.9 On-state characteristics (maximum
values)
ITM (A)
1000
100
10
Tj max.:
Vto = 0.77V
1
VTM(V)
Rd = 14m
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig.10 Thermal resistance junction to
ambient versus copper surface
under tab (D2PAK)
80 Rth (j-a)(°C/W)
70
60
50
40
30
20
10
0
0
4
8 12
Epoxy printed circuit board FR4,
copper thickness = 35 µm
S(cm2)
16 20 24 28 32 36 40
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
KAG
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
TO-263(D2PAK)
9.14 (0.360)
8.13 (0.320)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
A
4.83 (0.190)
4.06 (0.160)
K AG
15.85 (0.624)
15.00 (0.591)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
5.20 (0.205)
4.95 (0.195)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
2.79 (0.110)
2(A)
3(G)
1(K)
www.nellsemi.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 25PT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 25P05 | M25P05 |  STMicroelectronics |
| 25P1 | Diode ( Rectifier ) |  American Microsemiconductor |
| 25P10 | 1 Mbit Low Voltage Paged Flash Memory | STMicroelectronics |
| 25P10A | 1Mb 3V Serial Flash Embedded Memory |  Micron |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |