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PDF BLP10H610 Data sheet ( Hoja de datos )

Número de pieza BLP10H610
Descripción Broadband LDMOS driver transistor
Fabricantes NXP Semiconductors　
Logotipo NXP Semiconductors Logotipo



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BLP10H610
Broadband LDMOS driver transistor
Rev. 3 — 25 September 2014
Product data sheet
1. Product profile
1.1 General description
A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at
frequencies from HF to 1400 MHz.
Table 1. Application performance
Test signal
f
(MHz)
CW 27
40
60
80
88 to 108
400 to 450
950 to 1225
Pulsed RF [1]
860
1190 to 1410
DVB-T
860
[1] tp= 100 s; = 10 %.
VDS
PL
Gp
(V) (W) (dB)
50 10 26.7
50 20 25
50 19 24
50 19 25
50 16 25
50 >14 >25.5
50 >13 >16
50 10 22
45 11 >14
50 1
>21
D
(%)
46
65
65
67
62
>62
>42
60
-
-
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1400 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

1 page




BLP10H610 pdf
NXP Semiconductors
BLP10H610
Broadband LDMOS driver transistor
Table 9. List of components
See Figure 2 for component layout.
Component Description
Value
Remarks
C1, C4, C7 multilayer ceramic chip capacitor 100 pF
[1]
C2 multilayer ceramic chip capacitor 5.6 pF [1]
C3 multilayer ceramic chip capacitor 3.9 pF [1]
C5 multilayer ceramic chip capacitor 1 F, 25 V Murata
GRM31MR71E105KA01L
C6 multilayer ceramic chip capacitor 4.3 pF [1]
C8 multilayer ceramic chip capacitor 1 F, 50 V Murata
GRM32RR71H105KA01L
C9 electrolytic capacitor
220 F, 63 V
L1 wire inductor, 0.8 mm copper wire 2 turn, D = 3 mm
R1 resistor
0 SMD 0805
R2 resistor
20
SMD 0805
Q1 transistor
- BLP10H610
[1] American Technical Ceramics type 100A or capacitor of same quality.
8.3 Graphical data

*S
G%
 *S

DDD 
Ș'




3/
G%P


DDD
,GHDO3/

3/


Ș'
 
 
        
3/ :
VDS = 50 V; IDq = 60 mA; f = 860 MHz.
Fig 3. Power gain and drain efficiency as function of
output power; typical values


    
3L G%P
VDS = 50 V; IDq = 60 mA; f = 860 MHz.
(1) PL(1dB) = 40.93 dBm (12.4 W)
(2) PL(3dB) = 41.61 dBm (14.5 W)
Fig 4. Output power as a function of input power;
typical values
BLP10H610
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 September 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11

5 Page





BLP10H610 arduino
NXP Semiconductors
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness in class-AB operation . . . . . . . . . 4
8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Handling information. . . . . . . . . . . . . . . . . . . . . 8
11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Contact information. . . . . . . . . . . . . . . . . . . . . 10
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLP10H610
Broadband LDMOS driver transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 25 September 2014
Document identifier: BLP10H610

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