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PDF NX3P190 Data sheet ( Hoja de datos )
| Número de pieza | NX3P190 | |
| Descripción | Logic controlled high-side power switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3P190
Logic controlled high-side power switch
Rev. 5 — 14 January 2014
Product data sheet
1. General description
The NX3P190 is a high-side load switch which features a low ON resistance P-channel
MOSFET that supports more than 500 mA of continuous current. Designed for operation
from 1.1 V to 3.6 V, it is used in power domain isolation applications to reduce power
dissipation and extend battery life. The enable logic includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
The NX3P190 is ideal for portable, battery operated applications due to low ground
current and ultra-low shutdown current.
2. Features and benefits
Wide supply voltage range from 1.1 V to 3.6 V
Very low ON resistance:
95 m (typical) at a supply voltage of 1.8 V
High noise immunity
Low-power mode when EN is LOW
Low ground current (2 A maximum)
1.2 V control logic at a supply voltage of 3.6 V
High current handling capability (500 mA continuous current)
ESD protection:
HBM JESD22-A114F Class 3A exceeds 4000 V
CDM AEC-Q100-011 revision B exceeds 500 V
Specified from 40 C to +85 C
3. Applications
Cell phone
Digital cameras and audio devices
Portable and battery-powered equipment
1 page  
NXP Semiconductors
NX3P190
Logic controlled high-side power switch
12.1 Graphs
0.9
IGND
(μA)
0.8
0.7
001aao346
1.0
IGND
(μA)
0.8
001aao347
0.6
0.6
0.5
0.4
0.4
0.3
0.2
-40 -10 20 50 80 110
Tamb (°C)
0.2
1.2 1.7 2.2 2.7 3.2 3.7
VI(VIN) (V)
Fig 5.
VI(VIN) = 1.8 V; VI(EN) = 1.8 V; ILOAD = 500 mA.
Waveform showing the ground current versus
temperature
Fig 6.
VI(EN) = VI(VIN); Tamb = 25 C; ILOAD = 500 mA.
Waveform showing the ground current versus
input voltage on pin VIN
12
IGND
(μA)
8
VI(VIN) = 3.6 V
001aao348
4
VI(VIN) = 1.8 V
0
01234
VI(EN) (V)
Fig 7. Waveform showing the additional ground current versus input voltage
NX3P190
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 14 January 2014
© NXP B.V. 2014. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
NX3P190
Logic controlled high-side power switch
15. Abbreviations
Table 13. Abbreviations
Acronym
Description
CDM
Charged Device Model
ESD
ElectroStatic Discharge
HBM
Human Body Model
MOSFET
Metal-Oxide Semiconductor Field Effect Transistor
16. Revision history
Table 14. Revision history
Document ID
Release date Data sheet status
NX3P190 v.5
Modifications:
20140114
Product data sheet
• Figure title row figure 7 corrected (errata).
NX3P190 v.4
20121022
Product data sheet
NX3P190 v.3
20120903
Product data sheet
NX3P190 v.2
20111104
Product data sheet
NX3P190 v.1
20110822
Product data sheet
Change notice
-
-
-
-
-
Supersedes
NX3P190 v.4
NX3P190 v.3
NX3P190 v.2
NX3P190 v.1
-
NX3P190
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 14 January 2014
© NXP B.V. 2014. All rights reserved.
11 of 14
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| Páginas | Total 14 Páginas | |
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