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PDF NX3P191 Data sheet ( Hoja de datos )
| Número de pieza | NX3P191 | |
| Descripción | Logic controlled high-side power switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3P191
Logic controlled high-side power switch
Rev. 5 — 14 January 2014
Product data sheet
1. General description
The NX3P191 is a high-side load switch which features a low ON resistance P-channel
MOSFET. It has input inrush current reduction that supports more than 500 mA of
continuous current. It also has an integrated output discharge resistor to discharge the
output capacitance when disabled. Designed for operation from 1.1 V to 3.6 V, it is used in
power domain isolation applications to reduce power dissipation and extend battery life.
The enable logic includes integrated logic level translation making the device compatible
with lower voltage processors and controllers. The NX3P191 is ideal for portable, battery
operated applications due to low ground current and ultra-low shutdown current.
2. Features and benefits
Wide supply voltage range from 1.1 V to 3.6 V
Very low ON resistance:
95 m (typical) at a supply voltage of 1.8 V
High noise immunity
Low-power mode when EN is LOW
Low ground current (2 A maximum)
1.2 V control logic at a supply voltage of 3.6 V
High current handling capability (500 mA continuous current)
Internal output discharge resistor
Turn-on slew rate limiting
ESD protection:
HBM JESD22-A114F Class 3A exceeds 4000 V
CDM AEC-Q100-011 revision B exceeds 500 V
Specified from 40 C to +85 C
3. Applications
Cell phone
Digital cameras and audio devices
Portable and battery-powered equipment
1 page  
NXP Semiconductors
NX3P191
Logic controlled high-side power switch
12.1 Graphs
0.9
IGND
(μA)
0.8
0.7
001aao346
1.0
IGND
(μA)
0.8
001aao347
0.6
0.6
0.5
0.4
0.4
0.3
0.2
-40 -10 20 50 80 110
Tamb (°C)
0.2
1.2 1.7 2.2 2.7 3.2 3.7
VI(VIN) (V)
Fig 5.
VI(VIN) = 1.8 V; VI(EN) = 1.8 V; ILOAD = 500 mA.
Waveform showing the ground current versus
temperature
Fig 6.
VI(EN) = VI(VIN); Tamb = 25 C; ILOAD = 500 mA.
Waveform showing the ground current versus
input voltage on pin VIN
12
IGND
(μA)
8
VI(VIN) = 3.6 V
001aao348
4
VI(VIN) = 1.8 V
0
01234
VI(EN) (V)
Fig 7. Waveform showing the additional ground current versus input voltage
NX3P191
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 14 January 2014
© NXP B.V. 2014. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
14. Package outline
WLCSP4: wafer level chip-size package.
4 bumps; body 0.76 x 0.76 x 0.51 mm. (Backside Coating included)
NX3P191
Logic controlled high-side power switch
NX3P190/NX3P191
ball A1
index area
D AB
E
A2
A
A1
detail X
e
b
B
ball A1
index area
A
1
2
v CAB
wC
e
C
y
X
Dimensions
0
scale
Unit A A1 A2 b D E e v w y
max 0.54 0.22 0.32 0.29 0.81 0.81
mm nom 0.51 0.20 0.31 0.26 0.76 0.76 0.40 0.025 0.025 0.03
min 0.48 0.18 0.30 0.23 0.71 0.71
Outline
version
NX3P190/NX3P191
IEC
References
JEDEC
JEITA
2 mm
Fig 18. Package outline WLCSP4 (NX3P190/NX3P191)
NX3P191
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 14 January 2014
European
projection
nx3p190_191_po
Issue date
11-05-24
11-06-09
© NXP B.V. 2014. All rights reserved.
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet NX3P191.PDF ] | |
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