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부품번호 | IKQ100N60TA 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 16 페이지수
IGBT
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryantiparallelEmitterControlleddiode
IKQ100N60TA
600Vlowlossswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKQ100N60TA
TRENCHSTOPTMseries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=130°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
VCE
IC
ICpuls
600
160.0
100.0
400.0
V
A
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=117°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
-
IF
IFpuls
VGE
400.0
160.0
100.0
400.0
±20
A
A
A
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
Soldering temperature,1)
wave soldering 1.6mm (0.063in.) from case for 10s
tSC
Ptot
Tvj
Tstg
5
714.0
-40...+175
-55...+150
260
µs
W
°C
°C
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,2)
junction - case
Diode thermal resistance,2)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.21 K/W
0.35 K/W
40 K/W
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
4
Rev.2.2,2014-11-21
4페이지 TRENCHSTOPTMseries
IKQ100N60TA
800
700
100
600
500
10
not for linear use
400
300
1 200
100
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Safeoperatingarea
(D=0,TC=25°C,Tj≤175°C,VGE=0/15V,
tp=1µs.Provenbyproductiontest.)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
180 300
VGE=20V
160 270 15V
140 240 13V
11V
210
120 9V
180 8V
100
7V
150
80 6V
120
60
90
40 60
20 30
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tj=25°C)
7 Rev.2.2,2014-11-21
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ IKQ100N60TA.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKQ100N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
IKQ100N60TA | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |