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부품번호 | IPD60R400CE 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 17 페이지수
IPD60R400CE,IPS60R400CE,IPA60R400CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
DPAK
tab
2
1
3
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R400CEisFullPAKmarkingonly
IPAKSL
tab
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
400
mΩ
Id. 14.7 A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPD60R400CE
IPS60R400CE
IPA60R400CE
Package
PG-TO 252
PG-TO 251
PG-TO 220 FullPAK
Marking
RelatedLinks
60S400CE / 6R400CE*
see Appendix A
Final Data Sheet
1 Rev.2.2,2016-08-08
600VCoolMOSªCEPowerTransistor
IPD60R400CE,IPS60R400CE,IPA60R400CE
Table4ThermalcharacteristicsTO-252,TO-251
Parameter
Symbol
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC
- - 1.12
Thermal resistance, junction - ambient RthJA
- - 62
Thermal resistance, junction - ambient
for SMD version
RthJA
- 35 45
Soldering temperature, wave & reflow
soldering allowed
Tsold
- - 260
Unit Note/TestCondition
°C/W -
°C/W device on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
°C/W
layer, 70µm thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
°C reflow MSL3
Final Data Sheet
4 Rev.2.2,2016-08-08
4페이지 600VCoolMOSªCEPowerTransistor
IPD60R400CE,IPS60R400CE,IPA60R400CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(NonFullPAK)
120
Diagram2:Powerdissipation(FullPAK)
35
110
100 30
90
25
80
70 20
60
50 15
40
10
30
20 5
10
0
0
Ptot=f(TC)
25 50 75 100 125 150
TC[°C]
0
0
Ptot=f(TC)
25 50 75 100 125 150
TC[°C]
Diagram3:Max.transientthermalimpedance(NonFullPAK) Diagram4:Max.transientthermalimpedance(FullPAK)
101 101
100
0.5
0.2
0.1
0.05
10-1 0.02
0.01
single pulse
10-2
10-5
10-4
ZthJC=f(tP);parameter:D=tp/T
10-3
tp[s]
Final Data Sheet
10-2
0.5
100 0.2
0.1
0.05
0.02
10-1
0.01
single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp[s]
ZthJC=f(tP);parameter:D=tp/T
7 Rev.2.2,2016-08-08
7페이지 | |||
구 성 | 총 17 페이지수 | ||
다운로드 | [ IPD60R400CE.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IPD60R400CE | MOSFET ( Transistor ) | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |