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PDF IPB120N04S4-04 Data sheet ( Hoja de datos )
| Número de pieza | IPB120N04S4-04 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB120N04S4-04 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• 100% Avalanche tested
IPB120N04S4-04
Product Summary
V DS
R DS(on),max
ID
40 V
3.6 mW
120 A
PG-TO263-3-2
Type
IPB120N04S4-04
Package
PG-TO263-3-2
Ordering Code Marking
- 4N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse
E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1
-
Value
120
91
480
75
120
±20
79
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2014-04-07
1 page  
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
500
10 V
400
300
200
7V
6.5 V
100
0
0
6V
5.5 V
5V
24
V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
240
6
200
160
120
80
40
0
2
Rev. 1.1
175 °C
25 °C
-55 °C
46
V GS [V]
IPB120N04S4-04
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
12
5.5 V
6V
10
8
6
6.5 V
7V
4
10 V
2
0
80
40 80
I D [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
120
6
5
4
3
2
8
-60 -20 20
60 100 140 180
T j [°C]
page 5
2014-04-07
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IPB120N04S4-04.PDF ] | |
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