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TEA18363T 데이터시트 PDF




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기능 GreenChip SMPS control IC
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TEA18363T 데이터시트, 핀배열, 회로
TEA18363T
GreenChip SMPS control IC
Rev. 2 — 12 December 2013
Product data sheet
1. General description
The TEA18363T is a controller IC for low-cost Switched Mode Power Supplies (SMPS). It
is intended for flyback topologies. The built-in green functions provide high efficiency at all
power levels.
At high power levels the flyback operates in Quasi-Resonant (QR) mode. At lower power
levels, the controller switches to Frequency Reduction (FR) or Discontinuous Conduction
Mode (DCM) and limits the peak current to approximately 25 % of the maximum peak
current. Valley switching is used in all operating modes.
At low power levels, when the flyback switching frequency drops below 25 kHz, the
flyback converter switches to burst mode. A special burst mode has been integrated
which reduces the opto current to a minimum level, ensuring high efficiency at low power
and excellent no load power performance. As the switching frequency in this mode has a
minimum value of 25 kHz while the burst frequency is below 800 Hz, the frequencies are
outside the audible range. During the non-switching phase of the burst mode, the internal
IC supply current is minimized for further efficiency optimization.
The TEA18363T includes an accurate OverPower Protection (OPP). The OPP enables
the controller to operate in overpower situations for a limited amount of time. If the output
is shorted, the system switches to low-power mode where the output power is limited to a
lower level.
The TEA18363T is manufactured in a high-voltage Silicon-On-Insulator (SOI) process.
The SOI process combines the advantages of a low-voltage process (accuracy,
high-speed protection, functions, and control), while maintaining the high-voltage
capabilities (high-voltage start-up, low standby power, and an integrated X-capacitor
discharge function).
The TEA18363T enables low-cost, highly efficient and reliable supplies for power
requirements up to 75 W to be designed with a minimum number of external components.
All values mentioned in this data sheet are typical values, unless otherwise specified.




TEA18363T pdf, 반도체, 판매, 대치품
NXP Semiconductors
6. Pinning information
6.1 Pinning
TEA18363T
GreenChip SMPS control IC
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Fig 2. TEA18363T pinning diagram
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6.2 Pin description
Table 2.
Pin
VCC
GND
DRIVER
ISENSE
AUX
Pin description
Pin number
1
2
3
4
5
CTRL
n.c.
HV
6
7
8
Description
supply voltage
ground
gate driver output
current sense input
auxiliary winding input for demagnetization timing, valley
detect, overpower correction, and OVP
control input
not connected
high voltage start-up; active X-capacitor discharge
TEA18363T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 December 2013
© NXP B.V. 2013. All rights reserved.
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TEA18363T 전자부품, 판매, 대치품
NXP Semiconductors
TEA18363T
GreenChip SMPS control IC
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Fig 5. Modes of operation
3 DDD
At high output power the converter operates in quasi-resonant mode. The next converter
cycle starts after demagnetization of the transformer and detection of the valley. In
quasi-resonant mode switching losses are minimized because the external MOSFET is
switched on while the drain-source voltage is minimal.
To prevent high-frequency operation at lower loads, the quasi-resonant operation
switches to Discontinuous Conduction Mode (DCM) operation with valley skipping once
the frequency reaches its maximum. This frequency limit reduces the MOSFET switch-on
losses and conducted EMI.
At medium power levels, the controller enters Frequency Reduction (FR) mode. A Voltage
Controlled Oscillator (VCO) controls the frequency. The minimum frequency in this mode
is reduced to 25 kHz. During FR mode, the primary peak current is kept at an adjustable
minimum level to maintain high efficiency. Valley switching is also active in this mode.
At low power, the converter enters the burst mode. In burst mode, the minimum switching
frequency is 25 kHz.
7.3 Supply management
All internal reference voltages are derived from a temperature compensated on-chip band
gap circuit. Internal reference currents are derived from a trimmed and
temperature-compensated current reference circuit.
TEA18363T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 12 December 2013
© NXP B.V. 2013. All rights reserved.
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