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UT100N03 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UT100N03
기능 N-CHANNEL POWER MOSFET
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UT100N03 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
UT100N03
100A, 30V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UT100N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with
low gate voltages. This device is suitable for use as a load
switch or in PWM applications.
FEATURES
* RDS(ON) < 5.3m@VGS=10 V, ID =50 A
* RDS(ON) < 8.0m@VGS=4.5 V, ID =40 A
SYMBOL
Drain
1
TO-220
1
TO-251
1
TO-263
Power MOSFET
1
TO-220F
1
TO-252
1
DFN-8(5x6)
Gate
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
UT100N03L-TA3-T
UT100N03G-TA3-T
TO-220 G D S - - - - -
UT100N03L-TF3-T
UT100N03G-TF3-T
TO-220F G D S - - - - -
UT100N03L-TM3-T
UT100N03G-TM3-T
TO-251 G D S - - - - -
UT100N03L-TN3-R
UT100N03G-TN3-R
TO-252 G D S - - - - -
UT100N03L-TND-R
UT100N03G-TND-R
TO-252D G D S - - - - -
UT100N03L-TQ2-T
UT100N03G-TQ2-T
TO-263 G D S - - - - -
UT100N03L-TQ2-R
UT100N03G-TQ2-R
TO-263 G D S - - - - -
- UT100N03G-K08-5060-R DFN-8(5×6) S S S G D D D D
Note: Pin Assignment: G: Gate D: Drain S: Source
Packing
Tube
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Tape Reel
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UT100N03 pdf, 반도체, 판매, 대치품
UT100N03
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
Drain-Source Leakage Current
IDSS VDS=30 V,VGS =0 V
Gate-Source Leakage Current
IGSS VDS =0 V, VGS = ±20 V
ON CHARACTERISTICS(Note2)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
Static Drain-Source On-Resistance
RDS(ON)
VGS =10 V, ID =50 A
VGS =4.5 V, ID =40 A
DYNAMIC PARAMETERS(Note3)
Input Capacitance
Output Capacitance
CISS
COSS
VDS =15V, VGS =0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS(Note3)
Total Gate Charge
Gate Source Charge
QG
QGS VDS =15V, VGS =5V, ID =16A
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=15V, ID =1A, RGEN =6
VGS =10 V
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD IS=20 A,VGS=0 V
Drain-Source Diode Forward Current
IS
Notes: 1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.
Power MOSFET
MIN TYP MAX UNIT
30 V
1 µA
±100 nA
1 3V
3.05 5.3
4.2 8
m
9500
800
300
pF
50 65
20.8
19
25.7 50
10 20
128 200
34 70
nC
ns
1.5 V
90 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-193.H

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UT100N03 전자부품, 판매, 대치품
UT100N03
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-193.H

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부품번호상세설명 및 기능제조사
UT100N03

N-CHANNEL POWER MOSFET

Unisonic Technologies
Unisonic Technologies

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