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부품번호 | AT-32011 기능 |
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기능 | High Performance NPN Silicon Bipolar Transistor | ||
제조업체 | AVAGO | ||
로고 | |||
전체 10 페이지수
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-23 and SOT-143 SMT Plastic Packages
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
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"x" is the date code.
AT-32011, AT-32033 Typical Performance
20 20 20
15
10
5
2 mA
0 5 mA
10 mA
20 mA
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 5 V.
AT-32011 fig 8
15 15
10 10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 5 V.
AT-32011 fig 9
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 5 V.
AT-32011 fig 10
10
2 mA
5 mA
7.5
5
2.5
0
-2.5
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 1 V.
AT-32011 fig 11
25 2.5
20 20
15 15
10 10
5
2 mA
5 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-32011 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 1 V.
AT-32011 fig 12
25 2.5
5
2 mA
5 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 1 V.
AT-32011 fig 13
25
20 2.0
Ga
15 1.5
10
NF
5
1.0
0.5
0-50 0
50 1000
TEMPERATURE (°C)
Figure 14. AT-32011 Noise Figure and Associated Gain
at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
AT-31011 fig 14
20 2.0
15 1.5
Ga
10 1.0
NF
5 0.5
0-50 0
50 1000
TEMPERATURE (°C)
Figure 15. AT-32033 Noise Figure and Associated Gain
at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
AT-32011 fig 15
20
15
10
2 mA
5 5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (MHz)
Figure 16. AT-32011 and AT-32033 Third Order In-
tercept vs. Frequency and Bias at Vce = 2.7 V, with
Optimal Tuning.
AT-32011 fig 16
4페이지 AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq. S11
S21
S12 S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.52 -49 31.08 35.79 149 -37.78 0.013 72 0.83 -22
0.36
-138
22.96
14.06
102
-28.93
0.036
62
0.40 -42
0.34
-168
18.33
8.25
86
-25.15
0.055
64
0.31 -42
0.34
-174
17.46
7.47
83
-24.41
0.060
64
0.30 -42
0.34
165 14.13 5.09
71
-21.35
0.086
63
0.28 -45
0.34
155 12.61 4.27
64
-19.92
0.101
61
0.28 -49
0.35
148 11.74 3.86
60
-19.08
0.111
60
0.27 -52
0.36
136 10.23 3.25
52
-17.60
0.132
57
0.27 -58
0.39
120
8.38
2.62
40
-15.86
0.161
51
0.26 -67
0.45
98
6.00
2.00
23
-13.68
0.207
42
0.24 -84
0.52
82
4.25 1.63
7
-11.93
0.253
32
0.23 -106
AT-32011 Typical Noise Parameters,
30
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
MSG
Freq.
GHz
0.5[1]
0.9
1.8
2.4
FdmBin
Γ op t
Mag Ang
1.39 0.15
1.51 0.14
1.78 0.28
1.96 0.40
65
105
-164
-142
R–n
0.16
0.13
0.12
0.13
20
MAG
S21
10
MSG
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 21. AT-32011 Gains vs. Frequency at Vce = 2.7
V, Ic = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA AT-32011 fig 21
Freq. S11
S21
S12 S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag Ang
0.1
0.50
-35
29.84
31.03
137
-37.08
0.014
77
0.79 -18
0.5
0.16
-52
19.58
9.53
94
-25.35
0.054
77
0.53 -20
0.9
0.08
-36
14.81
5.50
81
-20.63
0.093
75
0.50 -24
1.0
0.07
-31
13.96
4.99
78
-19.66
0.104
74
0.50 -25
1.5
0.06
12
10.71
3.43
66
-16.31
0.153
69
0.49 -31
1.8
0.07
31
9.31
2.92
60
-14.75
0.183
66
0.48 -35
2.0
0.08
40
8.50
2.66
56
-13.85
0.203
63
0.47 -38
2.4
0.11
48
7.16
2.28
48
-12.32
0.242
59
0.46 -44
3.0
0.15
53
5.62
1.91
37
-10.49
0.299
52
0.43 -54
4.0
0.21
52
3.86 1.56 20
-8.11
0.393
41
0.39 -71
5.0
0.26
48
2.61 1.35
6
-6.34
0.482
29
0.33 -91
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq.
GHz
FdmBin
Γ op t
Mag Ang
0.5[1]
0.9
1.8
2.4
1.39 0.15
1.51 0.12
1.78 0.28
1.96 0.46
45
100
-135
-107
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
R–n
0.28
0.22
0.14
0.22
30
MSG
20
MAG
10
S21
MSG
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 22. AT-32033 Gains vs. Frequency at Vce =
2.7 V, Ic = 20 mA.
AT-32011 fig 22
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
AT-32011 | Low Current/ High Performance NPN Silicon Bipolar Transistor | Agilent(Hewlett-Packard) |
AT-32011 | High Performance NPN Silicon Bipolar Transistor | AVAGO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |