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AT-32033 데이터시트 PDF




AVAGO에서 제조한 전자 부품 AT-32033은 전자 산업 및 응용 분야에서
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부품번호 AT-32033 기능
기능 High Performance NPN Silicon Bipolar Transistor
제조업체 AVAGO
로고 AVAGO 로고


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AT-32033 데이터시트, 핀배열, 회로
AT-32011, AT-32033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-32011 and AT-32033 are high performance
NPN bipolar transistors that have been optimized for
maximum ft at low voltage operation, making them ideal
for use in battery powered applications in wireless mar-
kets. The AT-32033 uses the 3 lead SOT‑23, while the AT-
32011 places the same die in the higher performance 4
lead SOT-143. Both packages are industry standard, and
compatible with high volume surface mount assembly
techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger inter­digitated geometry
yields an easy to match to and extremely fast transistor
with moderate power, low noise resistance, and low op-
erating currents.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla­
tor, or active mixer. Typical amplifier designs at 900 MHz
yield 1.2 dB noise figures with 12 dB or more associated
gain at a 2.7 V, 2 mA bias, with noise performance being
relatively insensitive to input match. High gain capabil-
ity at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications. Voltage breakdowns are high
enough for use at 5 volts.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz ft, 30 GHz fMAX
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-32011: 1 dB NF, 14 dB GA
AT-32033: 1 dB NF, 12.5 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-23 and SOT-143 SMT Plastic Packages
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
320x
BASE EMITTER
SOT-143 (AT-32011)
COLLECTOR
320x
BASE EMITTER
SOT-23 (AT-32033)
Notes:
Top View.
Note:
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"x" is the date code.




AT-32033 pdf, 반도체, 판매, 대치품
AT-32011, AT-32033 Typical Performance
20 20 20
15
10
5
2 mA
0 5 mA
10 mA
20 mA
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 5 V.
AT-32011 fig 8
15 15
10 10
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at Vce = 5 V.
AT-32011 fig 9
5
2 mA
5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 5 V.
AT-32011 fig 10
10
2 mA
5 mA
7.5
5
2.5
0
-2.5
-50 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at Vce = 1 V.
AT-32011 fig 11
25 2.5
20 20
15 15
10 10
5
2 mA
5 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-32011 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 1 V.
AT-32011 fig 12
25 2.5
5
2 mA
5 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-32033 1 dB Compressed Gain vs. Fre-
quency and Current at Vce = 1 V.
AT-32011 fig 13
25
20 2.0
Ga
15 1.5
10
NF
5
1.0
0.5
0-50 0
50 1000
TEMPERATURE (°C)
Figure 14. AT-32011 Noise Figure and Associated Gain
at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
AT-31011 fig 14
20 2.0
15 1.5
Ga
10 1.0
NF
5 0.5
0-50 0
50 1000
TEMPERATURE (°C)
Figure 15. AT-32033 Noise Figure and Associated Gain
at Vce = 2.7 V, Ic = 2 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Losses De-embedded).
AT-32011 fig 15
20
15
10
2 mA
5 5 mA
10 mA
20 mA
00 0.5 1.0 1.5 2.0 2.5
FREQUENCY (MHz)
Figure 16. AT-32011 and AT-32033 Third Order In-
tercept vs. Frequency and Bias at Vce = 2.7 V, with
Optimal Tuning.
AT-32011 fig 16


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AT-32033 전자부품, 판매, 대치품
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.52 -49 31.08 35.79 149 -37.78 0.013 72 0.83 -22
0.36
-138
22.96
14.06
102
-28.93
0.036
62
0.40 -42
0.34
-168
18.33
8.25
86
-25.15
0.055
64
0.31 -42
0.34
-174
17.46
7.47
83
-24.41
0.060
64
0.30 -42
0.34
165 14.13 5.09
71
-21.35
0.086
63
0.28 -45
0.34
155 12.61 4.27
64
-19.92
0.101
61
0.28 -49
0.35
148 11.74 3.86
60
-19.08
0.111
60
0.27 -52
0.36
136 10.23 3.25
52
-17.60
0.132
57
0.27 -58
0.39
120
8.38
2.62
40
-15.86
0.161
51
0.26 -67
0.45
98
6.00
2.00
23
-13.68
0.207
42
0.24 -84
0.52
82
4.25 1.63
7
-11.93
0.253
32
0.23 -106
AT-32011 Typical Noise Parameters,
30
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
MSG
Freq.
GHz
0.5[1]
0.9
1.8
2.4
FdmBin
            Γ  op t
Mag Ang
1.39 0.15
1.51 0.14
1.78 0.28
1.96 0.40
65
105
-164
-142
R–n
0.16
0.13
0.12
0.13
20
MAG
S21
10
MSG
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 21. AT-32011 Gains vs. Frequency at Vce = 2.7
V, Ic = 20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA AT-32011 fig 21
Freq.       S11
S21
S12      S22
GHz Mag Ang dB Mag Ang dB
Mag Ang Mag Ang
0.1
0.50
-35
29.84
31.03
137
-37.08
0.014
77
0.79 -18
0.5
0.16
-52
19.58
9.53
94
-25.35
0.054
77
0.53 -20
0.9
0.08
-36
14.81
5.50
81
-20.63
0.093
75
0.50 -24
1.0
0.07
-31
13.96
4.99
78
-19.66
0.104
74
0.50 -25
1.5
0.06
12
10.71
3.43
66
-16.31
0.153
69
0.49 -31
1.8
0.07
31
9.31
2.92
60
-14.75
0.183
66
0.48 -35
2.0
0.08
40
8.50
2.66
56
-13.85
0.203
63
0.47 -38
2.4
0.11
48
7.16
2.28
48
-12.32
0.242
59
0.46 -44
3.0
0.15
53
5.62
1.91
37
-10.49
0.299
52
0.43 -54
4.0
0.21
52
3.86 1.56 20
-8.11
0.393
41
0.39 -71
5.0
0.26
48
2.61 1.35
6
-6.34
0.482
29
0.33 -91
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 20 mA
Freq.
GHz
FdmBin
            Γ  op t
Mag Ang
0.5[1]
0.9
1.8
2.4
1.39 0.15
1.51 0.12
1.78 0.28
1.96 0.46
45
100
-135
-107
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

R–n
0.28
0.22
0.14
0.22
30
MSG
20
MAG
10
S21
MSG
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 22. AT-32033 Gains vs. Frequency at Vce =
2.7 V, Ic = 20 mA.
AT-32011 fig 22

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관련 데이터시트

부품번호상세설명 및 기능제조사
AT-32032

High Performance NPN Silicon Bipolar Transistor

AVAGO
AVAGO
AT-32032-BLK

AT32032

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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