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ATF-331M4 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 ATF-331M4
기능 Low Noise Pseudomorphic HEMT
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ATF-331M4 데이터시트, 핀배열, 회로
ATF-331M4
Low Noise Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description
Avago Technologies’s ATF-331M4 is a high linearity, low
noise pHEMT housed in a miniature leadless package.
The ATF-331M4’s small size and low profile makes it
ideal for the design of hybrid modules and other space-
constraint devices.
Based on its featured performance, ATF-331M4 is ideal for
the first or second stage of base station LNA due to the
excellent combination of low noise figure and enhanced
linearity[1]. The device is also suitable for applications
in Wireless LAN, WLL/RLL, MMDS, and other systems
requiring super low noise figure with good intercept in
the 450 MHz to 10 GHz frequency range.
Note:
1. From the same PHEMT FET family, the smaller geometry ATF-34143
may also be considered for the higher gain performance, particularly
in the higher frequency band (1.8 GHz and up).
MiniPak 1.4 mm x 1.2 mm Package
Px
Features
Low noise figure
Excellent uniformity in product specifications
1600 micron gate width
Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm
Tape-and-reel packaging option available
Specifications
2 GHz; 4 V, 60 mA (Typ.)
0.6 dB noise figure
15 dB associated gain
19 dBm output power at 1 dB gain compression
31 dBm output 3rd order intercept
Applications
Tower mounted amplifier, low noise amplifier and
driver amplifier for GSM/TDMA/CDMA base stations
LNA for WLAN, WLL/RLL, MMDS and wireless data
infrastructures
General purpose discrete PHEMT for other ultra low
noise applications
Pin Connections and Package Marking
Source
Drain
PxPin 3 Pin 4
Gate Source
Pin 2 Pin 1
Note:
Top View. Package marking provides orientation, product identification
and date code.
“P” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.




ATF-331M4 pdf, 반도체, 판매, 대치품
ATF-331M4 Typical Performance Curves
40
2V
3V
4V
30
40
30
2V
3V
4V
20 20
10 10
0
0 20 40 60 80 100
Ids (mA)
Figure 6. OIP3, IIP3 & Bias[1] at 2 GHz.
0
0 20 40 60 80 100
Ids (mA)
Figure 7. OIP3, IIP3 & Bias[1] at 900 MHz.
25
2V
3V
4V
20
15
10
5
0
0 20 40 60 80
Idsq (mA)
Figure 8. P1dB vs. Bias[1,2] 2 GHz.
100
25
2V
3V
4V
20
15
10
5
0
0 20 40 60 80
Idsq (mA)
Figure 9. P1dB vs. Bias[1] 900 MHz.
100
16
2V
3V
15 4V
1.4
1.2
14 1.0
13 0.8
12 0.6
11 0.4
10 0.2
0 20 40 60 80 100
Id (mA)
Figure 10. NF & Gain vs. Bias[1] at 2 GHz.
22
2V
3V
21 4V
1.4
1.2
20 1.0
19 0.8
18 0.6
17 0.4
16 0.2
0 20 40 60 80 100 120
Id (mA)
Figure 11. NF & Gain vs. Bias[1] at 900 MHz.
Notes:
1. Measurements made on fixed tuned
production test board that was tuned
for optimal gain match with reasonable
noise figure at 4V 60  mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and
a realizable match based on production
test board requirements. Circuit losses
have been de-embedded from actual
measurements.
2. Quiescent drain current, Idsq, is set
with zero RF drive applied. As P1dB is
approached, the drain current may increase
or decrease depending on frequency and
dc bias point. At lower values of Idsq the
device is running closer to class B as power
output approaches P1dB. This results in
higher P1dB and higher PAE (power added
efficiency) when compared to a device that
is driven by a constant current source as is
typically done with active biasing.
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ATF-331M4 전자부품, 판매, 대치품
ATF-331M4 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA
Freq. S11
GHz Mag. Ang. dB
S21
Mag. Ang. dB
0.5
0.82
-90.50 22.45
13.27
128.40 -27.54
0.8
0.78
-117.70 19.31
9.24
113.30 -25.35
1.0
0.77
-130.90 18.50
8.41
106.40 -24.58
1.5
0.75
-150.40 15.23
5.77
93.93
-22.97
1.8
0.74
-158.70 14.02
5.02
88.30
-21.94
2.0
0.74
-162.70 13.79
4.89
85.10
-21.51
2.5
0.72
-170.00 10.81
3.47
77.97
-20.18
3.0
0.69
-174.10 9.60
3.02
71.63
-18.24
4.0
0.71
163.70 7.13
2.27
53.03
-17.33
5.0
0.73
150.50 5.46
1.87
41.40
-16.83
6.0
0.71
141.50 4.37
1.65
28.50
-16.31
7.0
0.73
124.40 3.34
1.47
14.10
-15.55
8.0 0.74 113.40 3.14 1.44 6.00 -15.19
9.0
0.76
98.20
2.94
1.40
-5.57
-15.14
10.0
0.79
84.10
2.33
1.31
-19.10 -14.94
11.0
0.86
62.40
0.44
1.05
-33.40 -14.94
12.0
0.87
62.50
-0.38
0.96
-38.90 -14.47
13.0
0.88
52.30
-1.20
0.87
-50.90 -14.99
14.0
0.89
44.90
-1.79
0.81
-60.20 -15.55
15.0
0.91
39.00
-3.64
0.66
-69.10 -15.81
16.0
0.93
33.40
-5.30
0.54
-76.40 -18.64
17.0
0.93
28.50
-5.40
0.54
-82.40 -17.79
18.0
0.92
25.10
-6.34
0.48
-86.10 -17.92
S12
Mag.
0.042
0.054
0.059
0.071
0.080
0.084
0.098
0.122
0.136
0.144
0.153
0.167
0.174
0.175
0.179
0.179
0.189
0.178
0.167
0.162
0.117
0.129
0.127
Ang.
53.80
47.10
45.10
43.03
42.33
42.13
41.53
40.67
30.70
25.67
18.13
8.10
3.57
-4.97
-16.07
-28.27
-32.20
-42.87
-50.87
-59.03
-65.67
-71.87
-76.40
S22
Mag.
0.38
0.44
0.46
0.49
0.49
0.50
0.50
0.52
0.52
0.52
0.54
0.54
0.54
0.55
0.55
0.55
0.61
0.66
0.70
0.73
0.76
0.78
0.80
Ang.
-155.50
-165.77
-170.63
180.17
-184.17
173.27
166.80
163.70
139.43
136.10
118.23
111.83
110.90
95.33
80.50
67.80
61.73
50.97
41.63
32.17
26.13
19.77
14.87
MSG/MAG
dB
24.99
22.33
21.54
19.10
17.98
17.65
15.49
13.92
11.20
9.63
8.02
7.28
7.28
7.05
6.83
6.40
6.00
5.55
5.33
4.81
4.49
4.48
3.39
Typical Noise Parameters, VDS = 3V, IDS = 40 mA
Freq
GHz
0.50
0.90
1.00
1.50
1.80
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
Fmin
dB
0.37
0.41
0.42
0.46
0.49
0.51
0.55
0.59
0.68
0.77
0.86
0.95
1.04
1.13
1.22
opt
Mag.
0.377
0.367
0.366
0.365
0.37
0.374
0.392
0.416
0.479
0.553
0.627
0.69
0.733
0.742
0.709
opt
Ang.
0.7
24.5
31.1
61.6
77.8
87.9
110.5
129.6
159.2
179.4
-167.2
-157.6
-149.2
-139.1
-124.7
Rn/50
0.07
0.06
0.06
0.05
0.05
0.05
0.04
0.04
0.03
0.02
0.02
0.04
0.06
0.1
0.18
Ga
dB
21.42
18.53
18.28
15.95
15.42
14.61
13.33
12.25
10.5
9.06
8.05
7.13
6.38
5.97
5
40
30
MSG
20
10
MAG
0
|S21|2
-10
0 5 10 15
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
20
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
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관련 데이터시트

부품번호상세설명 및 기능제조사
ATF-331M4

Low Noise Pseudomorphic HEMT

AVAGO
AVAGO
ATF-331M4-BLK

Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

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