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부품번호 | HSMS-270P 기능 |
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기능 | High Performance Schottky Diode | ||
제조업체 | AVAGO | ||
로고 | |||
전체 9 페이지수
HSMS-2700, 2702, 270B, 270C, 270P
High Performance Schottky Diode
for Transient Suppression
Data Sheet
Description
The HSMS-2700 series of Schottky diodes, commonly
referred to as clipping /clamping diodes, are optimal for
circuit and waveshape preservation applications with
high speed switching. Ultra-low series resistance, RS,
makes them ideal for protecting sensitive circuit elements
against higher current transients carried on data lines.
With picosecond switching, the HSMS-270x can respond
to noise spikes with rise times as fast as 1 ns. Low ca-
pacitance minimizes waveshape loss that causes signal
degradation.
Features
• Ultra-low Series Resistance for Higher Current
Handling
• Picosecond Switching
• Low Capacitance
• Lead-free
Applications
RF and computer designs that require circuit protection,
high-speed switching, and voltage clamping.
HSMS-270x DC Electrical Specifications, TA = +25°C[1]
Part Package
Number Marking Lead
HSMS- Code[2] Code Configuration Package
-2700 J0
0 Single
SOT-23
Maximum
Forward
Voltage
VF (mV)
Minimum
Breakdown
Voltage
VBR (V)
Typical
Capacitance
CT (pF)
Typical
Series
Resistance
RS (Ω)
-270B
B
SOT-323
(3-lead SC-70)
-2702
-270C
J2
2
C Series
SOT-23
550 [3]
SOT-323
(3-lead SC-70)
15[4]
6.7[5]
0.65
-270P JP
P
Bridge Quad
SOT-363
(6-lead SC-70)
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IR = 100 μA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA; guaranteed by design.
Maximum
Eff. Carrier
Lifetime
τ (ps)
100[6]
Package Lead Code Identification (Top View)
SINGLE
3
SERIES
3
BRIDGE QUAD
6 54
1 0, B 2
1 2, C 2
123
Package Dimensions
Outline SOT-23
e2
e1
Device Orientation
For Outlines SOT-23/323
REEL
E XXX
e
B
D
A1
Notes:
XXX-package marking
Drawings are not to scale
E1
L
C
DIMENSIONS (mm)
SYMBOL MIN.
MAX.
A 0.79 1.20
A A1 0.000 0.100
B 0.30 0.54
C 0.08 0.20
D 2.73 3.13
E1 1.15 1.50
e 0.89 1.02
e1 1.78 2.04
e2 0.45 0.60
E 2.10 2.70
L 0.45 0.69
USER
FEED
DIRECTION
COVER TAPE
TOP VIEW
4 mm
CARRIER
TAPE
END VIE W
8 mm
ABC ABC ABC ABC
Note: "AB" represents package marking code.
"C" represents date code.
Tape Dimensions and Product Orientation
For Outline SOT-23
P D P2
P0
Recommended PCB Pad Layout
For Avago’s SOT-23 Products
E
0.039
1
0.039
1
F
W
t1 D1
9° MAX
Ko 8° MAX
13.5° MAX
A0 B0
CAVITY
PERFORATION
CARRIER TAPE
DISTANCE
BETWEEN
CENTERLINE
DESCRIPTION
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
DIAMETER
PITCH
POSITION
WIDTH
THICKNESS
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
SYMBOL
A0
B0
K0
P
D1
D
P0
E
SIZE (mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.05
1.50 + 0.10
4.00 ± 0.10
1.75 ± 0.10
SIZE (INCHES)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 ± 0.002
0.059 + 0.004
0.157 ± 0.004
0.069 ± 0.004
W 8.00 +0.30 –0.10 0.315 +0.012 –0.004
t1 0.229 ± 0.013 0.009 ± 0.0005
F 3.50 ± 0.05 0.138 ± 0.002
P2 2.00 ± 0.05
0.079 ± 0.002
0.035
0.9
0.079
2.0
0.031
0.8
Dimensions in
inches
mm
4
4페이지 Applications Information
Schottky Diode Fundamentals
The HSMS-270x series of clipping/clamping diodes
are Schottky devices. A Schottky device is a rectifying,
metal-semiconductor contact formed between a metal
and an n-doped or a p-doped semiconductor. When a
metal-semiconductor junction is formed, free electrons
flow across the junction from the semiconductor and fill
the free-energy states in the metal. This flow of electrons
creates a depletion or potential across the junction. The
difference in energy levels between semiconductor and
metal is called a Schottky barrier.
P-doped, Schottky-barrier diodes excel at applications
requiring ultra low turn-on voltage (such as zero-biased
RF detectors). But their very low, breakdown-voltage
and high series-resistance make them unsuitable for
the clipping and clamping applications involving high
forward currents and high reverse voltages. Therefore,
this discussion will focus entirely on n-doped Schottky
diodes.
Under a forward bias (metal connected to positive in an
n-doped Schottky), or forward voltage, VF, there are many
electrons with enough thermal energy to cross the barrier
potential into the metal. Once the applied bias exceeds
the built-in potential of the junction, the forward current,
IF, will increase rapidly as VF increases.
When the Schottky diode is reverse biased, the potential
barrier for electrons becomes large; hence, there is a
small probability that an electron will have sufficient
thermal energy to cross the junction. The reverse leakage
current will be in the nanoampere to microampere range,
depending upon the diode type, the reverse voltage, and
the temperature.
In contrast to a conventional p-n junction, current in
the Schottky diode is carried only by majority carriers
(electrons). Because no minority-carrier (hole) charge
storage effects are present, Schottky diodes have carrier
lifetimes of less than 100 ps. This extremely fast switching
time makes the Schottky diode an ideal rectifier at fre-
quencies of 50 GHz and higher.
Another significant difference between Schottky and p-n
diodes is the forward voltage drop. Schottky diodes have
a threshold of typically 0.3 V in comparison to that of 0.6 V
in p-n junction diodes. See Figure 6.
Through the careful manipulation of the diameter of the
Schottky contact and the choice of metal deposited on
the n-doped silicon, the important characteristics of the
diode (junction capacitance, CJ; parasitic series resistance,
RS; breakdown voltage, VBR; and forward voltage, VF,)
can be optimized for specific applications. The HSMS-
270x series and HBAT-540x series of diodes are a case in
point.
Both diodes have similar barrier heights; and this is
indicated by corresponding values of saturation current,
IS. Yet, different contact diameters and epitaxial-layer
thickness result in very different values of CJ and RS. This
is seen by comparing their SPICE parameters in Table 1.
Table 1. HSMS-270x and HBAT-540x SPICE Parameters.
Parameter
BV
CJ0
EG
IBV
IS
N
RS
PB
PT
M
HSMS- 270x
25 V
6.7 pF
0.55 eV
10E-4 A
1.4E-7 A
1.04
0.65 Ω
0.6 V
2
0.5
HBAT- 540x
40 V
3.0 pF
0.55 eV
10E-4 A
1.0E-7 A
1.0
2.4 Ω
0.6 V
2
0.5
At low values of IF ≤ 1 mA, the forward voltages of the
two diodes are nearly identical. However, as current rises
above 10 mA, the lower series resistance of the HSMS-
270x allows for a much lower forward voltage. This gives
the HSMS-270x a much higher current handling capabil-
ity. The trade-off is a higher value of junction capacitance.
The forward voltage and current plots illustrate the
differences in these two Schottky diodes, as shown in
Figure 7.
300
HSMS-270x
100
PN
METAL N
HBAT-540x
10
CAPACITANCE
CURRENT
CAPACITANCE
CURRENT
0.6 V
0.3V
Figure 6.
–+
BIAS VOLTAGE
PN JUNCTION
–+
BIAS VOLTAGE
SCHOTTKY JUNCTION
1
.1
.01
0 0.1 0.2 0.3 0.4 0.5 0.6
VF – FORWARD VOLTAGE (V)
Figure 7. Forward Current vs. Forward Voltage at 25°C.
7
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부품번호 | 상세설명 및 기능 | 제조사 |
HSMS-2700 | (HSMS-2700 / HSMS-2702) High Performance Schottky Diode | Hewlett-Packard |
HSMS-2700 | High Performance Schottky Diode | AVAGO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |