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HSMS-2824 데이터시트 PDF




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부품번호 HSMS-2824 기능
기능 Surface Mount RF Schottky Barrier Diodes
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HSMS-2824 데이터시트, 핀배열, 회로
HSMS-282x
Surface Mount RF Schottky ­Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifica­tions and package con­figura­tions to
give the d­ esigner wide flexib­ ility. Typical applications of
these Schottky diodes are mixing, detecting, switching,
sampling, clamping, and wave shaping. The HSMS‑282x
series of diodes is the best all-around choice for most
applications, featuring low series resistance, low forward
voltage at all current levels and good RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Features
Low Turn-On Voltage (As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time) Rate*
Six-sigma Quality Level
Single, Dual and Quad Versions
Unique Configurations in Surface Mount SOT-363 Package
– increase flexibility
– save board space
– reduce cost
HSMS-282K Grounded Center Leads Provide up to 10
dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power Dissipation
Lead-free Option Available
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
1 #0 2
UNCONNECTED
PAIR
34
1 #2 2
RING
QUAD
34
1 #3 2
BRIDGE
QUAD
34
1 #4 2
CROSS-OVER
QUAD
34
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
1 #5 2
1 #7 2
1 #8 2
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1 #9 2
B
COMMON
ANODE
C
COMMON
CATHODE
1 2M 3
BRIDGE
QUAD
654
1 2P 3
1 2N 3
RING
QUAD
654
1 2R 3
EF




HSMS-2824 pdf, 반도체, 판매, 대치품
Typical Performance, TC = 25°C (unless otherwise noted), Single Diode
100
TA = +125C
TA = +75C
10
TA = +25C
TA = –25C
1
0.1
0.01
0
0.10 0.20 0.30 0.40 0.50
VF – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage at
Temperatures.
100,000
10,000
1000
100
10 TA = +125C
TA = +75C
1 TA = +25C
0 5 10 15
VR – REVERSE VOLTAGE (V)
Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.
1
0.8
0.6
0.4
0.2
0
02 468
VR – REVERSE VOLTAGE (V)
Figure 3. Total Capacitance vs. Reverse Voltage.
1000
100
10
1
0.1 1 10 100
IF – FORWARD CURRENT (mA)
Figure 4. Dynamic Resistance vs. Forward Current.
30 30
10
IF (Left Scale)
10
VF (Right Scale)
11
0.3 0.3
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF - FORWARD VOLTAGE (V)
Figure 5. Typical Vf Match, Series Pairs and Quads at
Mixer Bias Levels.
100 1.0
IF (Left Scale)
10
VF (Right Scale)
1 0.1
0.10 0.15 0.20 0.25
VF - FORWARD VOLTAGE (V)
Figure 6. Typical Vf Match, Series Pairs at Detector Bias
Levels.
1
DC bias = 3 A
0.1
-25C
+25C
+75C
RF in 18 nH HSMS-282B Vo
0.01
3.3 nH
100 pF
100 K
0.001
-40
-30
-20 -10
0
Pin – INPUT POWER (dBm)
Figure 7. Typical Output Voltage vs. Input Power,
Small Signal Detector Operating at 850 MHz.
10
1
0.1
0.01
+25C RF in HSMS-282B
0.001
Vo
0.0001
68 100 pF
4.7 K
1E-005
-20 -10 0 10 20 30
Pin – INPUT POWER (dBm)
Figure 8. Typical Output Voltage vs. Input Power,
Large Signal Detector Operating at 915 MHz.
10
9
8
7
6
0 2 4 6 8 10 12
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz
(Ref AN997).
4

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HSMS-2824 전자부품, 판매, 대치품
bias
differential
amplifier
matching
network
HSMS-282P
Figure 14. Fabrication of Avago Diode Pairs.
In high power applications, coupling of RF energy from
the detector diode to the reference diode can introduce
error in the differential detector. The HSMS‑282K diode
pair, in the six lead SOT‑363 package, has a copper bar
between the diodes that adds 10 dB of additional isola‑
tion between them. As this part is manufactured in the
SOT‑363 package it also provides the benefit of being 40%
smaller than larger SOT‑143 devices. The HSMS‑282K is il‑
lustrated in Figure 15 — note that the ground connections
must be made as close to the package as possible to min‑
imize stray inductance to ground.
detector diode
PA Vbias
Figure 17. Voltage Doubler ­Differential Detector.
However, care must be taken to assure that the two refer‑
ence diodes closely match the two detector diodes. One
possible configuration is given in Figure  16, using two
HSMS‑2825. Board space can be saved through the use of
the HSMS‑282P open bridge quad, as shown in Figure 17.
While the differential detector works well over tempera‑
ture, another design approach[3] works well for large signal
detectors. See Figure 18 for the schematic and a physical
layout of the circuit. In this design, the two 4.7 KΩ resis‑
tors and diode D2 act as a variable power divider, assuring
constant output voltage over temperature and improving
output linearity.
RFin
68
D1 4.7 K Vo
33 pF
4.7 K
D2
68
33 pF
HSMS-282K
reference diode
to differential amplifier
Figure 15. High Power Differential Detector.
The concept of the voltage doubler can be applied to the
differential detector, permitting twice the output voltage
for a given input power (as well as improving input im‑
pedance and suppressing second harmonics).
bias
matching
network
differential
amplifier
HSMS-2825
HSMS-2825
HSMS-2825
or
HSMS-282K
RFin
HSMS-282K
Figure 18. Temperature Compensated Detector.
Vo
4.7 K
In certain applications, such as a dual‑band cellphone
handset operating at both 900 and 1800  MHz, the sec‑
ond harmonics generated in the power control output
detector when the handset is working at 900 MHz can
cause problems. A filter at the output can reduce unwant‑
ed emissions at 1800 MHz in this case, but a lower cost
solution is available[4]. Illustrated schematically in Figure
19, this circuit uses diode D2 and its associated passive
components to cancel all even order harmonics at the de‑
tector’s RF input. Diodes D3 and D4 provide temperature
compensation as described above. All four diodes are con‑
tained in a single HSMS‑ 282R package, as illustrated in
the layout shown in Figure 20.
Figure 16. Voltage Doubler ­Differential Detector.
Note 3. Hans Eriksson and Raymond W. Waugh, “A Temperature Compensated Linear Diode Detector,” to be published.
7

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