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Número de pieza | NXPS20H110C | |
Descripción | Dual power Schottky diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! NXPS20H110C
Dual power Schottky diode
Rev. 2 — 24 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High junction temperature capability
Low leakage current
1.3 Applications
DC to DC converters
Freewheeling diode
Negligible switching losses
Optimised design to give low VF and
high Tj(max)
OR-ing diode
Switched mode power supply rectifier
1.4 Quick reference data
Table 1.
Symbol
VRRM
IF(AV)
Quick reference data
Parameter
repetitive peak reverse voltage
average forward current
IO(AV)
average output current
Tj junction temperature
Static characteristics
VF forward voltage
IR reverse current
Conditions
square-wave pulse; δ = 0.5 ;
Tj ≤ 163 °C; per diode; see Figure 1;
see Figure 2; see Figure 3
square-wave pulse; δ = 0.5 ;
Tmb ≤ 161 °C; both diodes conducting
IF = 10 A; Tj = 25 °C; see Figure 6
IF = 10 A; Tj = 125 °C; see Figure 6
VR = 110 V; Tj = 25 °C; see Figure 7
VR = 110 V; Tj = 125 °C; see Figure 7
Min Typ Max Unit
- - 110 V
- - 10 A
- - 20 A
- - 175 °C
- - 0.77 V
- 0.59 0.64 V
-
2.5 6
µA
- 1.5 6.5 mA
1 page NXP Semiconductors
NXPS20H110C
Dual power Schottky diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Cd diode capacitance
Conditions
IF = 8 A; Tj = 25 °C; see Figure 6
IF = 10 A; Tj = 25 °C; see Figure 6
IF = 16 A; Tj = 25 °C; see Figure 6
IF = 20 A; Tj = 25 °C; see Figure 6
IF = 8 A; Tj = 125 °C; see Figure 6
IF = 10 A; Tj = 125 °C; see Figure 6
IF = 16 A; Tj = 125 °C; see Figure 6
IF = 20 A; Tj = 125 °C; see Figure 6
VR = 110 V; Tj = 25 °C; see Figure 7
VR = 110 V; Tj = 125 °C; see Figure 7
f = 1 MHz; VR = 10 V; Tj = 25 °C;
see Figure 8
Min Typ Max Unit
- - 0.71 V
- - 0.77 V
- - 0.81 V
- - 0.88 V
- 0.56 0.58 V
- 0.59 0.64 V
- 0.65 0.68 V
- 0.67 0.73 V
-
2.5 6
µA
- 1.5 6.5 mA
- 250 - pF
20
IF
(A)
16
003aaj319
12
(1) (2) (3)
8
4
0
0 0.2 0.4 0.6 0.8 1
VF (V)
104
IR
(uA)
103
102
003aaj320
(4)
(3)
(2)
10
1 (1)
10-1
10-2
0
20 40 60 80 100 120
VR (V)
Fig 6. Forward current as a function of forward
voltage; per diode
Fig 7. Reverse leakage current as a function of
reverse voltage; per diode; typical values
NXPS20H110C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 24 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 11
5 Page NXP Semiconductors
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Contact information. . . . . . . . . . . . . . . . . . . . . .10
NXPS20H110C
Dual power Schottky diode
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 May 2012
Document identifier: NXPS20H110C
11 Page |
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Número de pieza | Descripción | Fabricantes |
NXPS20H110C | Dual power Schottky diode | NXP Semiconductors |
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