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PDF NXPSC10650 Data sheet ( Hoja de datos )
| Número de pieza | NXPSC10650 | |
| Descripción | Silicon Carbide Diode | |
| Fabricantes | NXP Semiconductors | |
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NXPSC10650
Silicon Carbide Diode
4 May 2015
Product data sheet
1. General description
Silicon Carbide Schottky diode in a SOD59A (TO-220AC) plastic package, designed for
high frequency switched-mode power supplies.
2. Features and benefits
• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
3. Applications
• Power factor correction
• Telecom/Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED/OLED TV
• Motor Drives
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 112 °C; square-wave
pulse; Fig. 1; Fig. 2
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 25 °C; Fig. 4
Min Typ Max Unit
- - 650 V
- - 10 A
- - 175 °C
- 1.5 1.7 V
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NXP Semiconductors
NXPSC10650
Silicon Carbide Diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
Cd diode capacitance
Conditions
IF = 10 A; Tj = 25 °C; Fig. 4
IF = 10 A; Tj = 150 °C; Fig. 4
VR = 650 V; Tj = 25 °C
VR = 650 V; Tj = 150 °C
IF = 10 A; dIF/dt = 500 A/µs;
VR = 400 V; Tj = 25 °C; Fig. 5
f = 1 MHz; VR = 1 V; Tj = 25 °C
f = 1 MHz; VR = 300 V; Tj = 25 °C
f = 1 MHz; VR = 600 V; Tj = 25 °C
20
IF
(A)
16
12
8
4
aaa-017112
(1)
(2)
(3)
(4)
16
Qr
(nC)
12
8
4
Min Typ Max Unit
- 1.5 1.7 V
- 1.8 2.1 V
- - 250 µA
- - 800 µA
- 15 - nC
- 300 - pF
- 34 - pF
- 28 - pF
aaa-017140
0
0123
Vo = 0.701 V; Rs = 0.131 Ω
(1) Tj = 25 °C; typical values
(2) Tj = 100 °C; typical values
(3) Tj = 150 °C; typical values
(4) Tj = 175 °C; typical values
VF (V)
4
Fig. 4. Forward current as a function of forward
voltage; typical values
0
0 50 100 150 175
Tj (°C)
Fig. 5. Recovered charge as a function of junction
temperature
NXPSC10650
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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