|
|
PDF NTHS2101P Data sheet ( Hoja de datos )
| Número de pieza | NTHS2101P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTHS2101P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
NTHS2101P
Power MOSFET
−8.0 V, −7.5 A P−Channel ChipFETt
Features
• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
making it an Ideal Device for Applications where Board Space is at a
Premium
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Environments such as Portable Electronics
• Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
Operating Voltage used in many Logic ICs in Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment such as MP3 Players, Cell Phones, Digital
Cameras, Personal Digital Assistant and other Portable Applications
• Charge Control in Battery Chargers
• Buck and Boost Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous
− 5 seconds
VDSS
VGS
ID
−8.0
"8.0
−5.4
−7.5
Vdc
Vdc
A
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
PD W
1.3
2.5
0.7
1.3
Continuous Source Current
Is
−1.1
A
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
RqJA
°C/W
50
95
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
http://onsemi.com
V(BR)DSS
−8.0 V
Ultra Low RDS(on) TYP
19 mW @ −4.5 VGS
25 mW @ −2.5 VGS
34 mW @ −1.8 VGS
ID MAX
−7.5 A
S
G
D
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 1
PIN
CONNECTIONS
MARKING
DIAGRAM
D8
D7
D6
S5
1D
2D
3D
4G
1
2
3
4
8
7
6
5
D4 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHS2101PT1
ChipFET 3000/Tape & Reel
NTHS2101PT1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
Publication Order Number:
NTHS2101P/D
1 page  
NTHS2101P
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE E
A
8765
SB
1234
LD
G
M
J
K
5678
4321
C
0.05 (0.002)
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. DRAIN
4. GATE
5. SOURCE
6. DRAIN
7. DRAIN
8. DRAIN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 2.95 3.10 0.116 0.122
B 1.55 1.70 0.061 0.067
C 1.00 1.10 0.039 0.043
D 0.25 0.35 0.010 0.014
G 0.65 BSC
0.025 BSC
J 0.10 0.20 0.004 0.008
K 0.28 0.42 0.011 0.017
L 0.55 BSC
0.022 BSC
M 5 ° NOM
5 ° NOM
S 1.80 2.00 0.072 0.080
0.457
0.018
2.032
0.08
SOLDERING FOOTPRINTS*
0.635
0.025
2.032
0.08
1.727
0.068
0.66
0.026
0.711
0.028
ǒ ǓSCALE 20:1
mm
inches
Basic
0.457
0.018
0.66
0.026
0.711
0.028
Style 1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.178
0.007
ǒ mm Ǔ
inches
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTHS2101P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTHS2101P | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |