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PDF STD22NM20N Data sheet ( Hoja de datos )

Número de pieza STD22NM20N
Descripción N-CHANNEL MOSFET
Fabricantes STMicroelectronics　
Logotipo STMicroelectronics Logotipo



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STD22NM20N
N-CHANNEL 200V - 0.088Ω - 22A DPAK
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STD22NM20N
200 V
< 0.105 Ω 22 A
s WORLDWIDE LOWEST GATE CHARGE
s TYPICAL RDS(on) = 0.088 Ω
s HIGH dv/dt and AVALANCHE CAPABILITIES
s LOW INPUT CAPACITANCE
s LOW GATE RESISTANCE
DESCRIPTION
This 200V MOSFET with a new advanced layout
brings all unique advantages of MDmesh technol-
ogy to lower voltages. The device exhibits world-
wide lowest gate charge for any given on-
resistance. Its use is therefore ideal as primary
switch in isolated DC-DC converters for Telecom
and Computer applications. Used in combination
with secondary-side low-voltage STripFET™
products, it contributes to reducting losses and
boosting effeciency.
Figure 1: Package
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density allowing system miniaturization
and higher efficiencies
Table 2: Order Codes
SALES TYPE
STD22NM20NT4
MARKING
D22NM20N
PACKAGE
DPAK
PACKAGING
TAPE & REEL
June 2005
Rev. 4
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STD22NM20N pdf
STD22NM20N
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 14: Normalized BVdss vs Temperature
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