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부품번호 | CHA2110-98F 기능 |
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기능 | 7-12GHz LNA | ||
제조업체 | United Monolithic Semiconductors | ||
로고 | |||
전체 10 페이지수
CHA2110-98F
7-12GHz LNA
GaAs Monolithic Microwave IC
Description
The CHA2110-98F is a monolithic two-stages
wide band low noise amplifier circuit. It is
self-biased.
It is designed for military, space and
telecommunication systems.
VD1 VD2
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, and air bridges.
IN
It is available in chip form.
OUT
Main Features
■ Broadband performances: 7-12GHz
■ Linear gain: 19dB
■ Return Losses: 12dB
■ Noise Figure: 1.2dB
■ Output power @ 1dBcomp: 11dBm
■ DC bias: Vd=4 Volt@Id=45mA
■ Chip size 1.93x1.3x0.1mm
25 5.0
24 4.5
23 4.0
22 3.5
21
20 S21
3.0
2.5
19 2.0
18 1.5
17 NF 1.0
16 0.5
15 0.0
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
Gain and NF versus frequency
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
NF Noise Figure
Pout Output Power @1dB comp (f=10GHz)
Min Typ Max Unit
7 12 GHz
19 dB
1.2 dB
11 dBm
Ref. : DSCHA21102181 - 29 Jun 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
CHA2110-98F
7-12GHz LNA
Test fixture Measurements
T=[-40°C ; +25°C ; +85°C], Vd = +4V, Id = 45mA
Noise Figure versus frequency
5.0
4.5
4.0
3.5
3.0
2.5
2.0
+85°C
1.5
1.0 +25°C
0.5 -40°C
0.0
7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
Frequency (GHz)
P1dB versus frequency
+85°C
-40°C
+25°C
Ref. : DSCHA21102181 - 29 Jun 12
4/10 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
4페이지 7-12GHz LNA
Recommended assembly plan
VD1
10nF
100pF
CHA2110-98F
VD2
10nF
100pF
Note: Supply feed should be bypassed. 25µm diameter gold wire is to be preferred.
Recommended circuit bonding table
Label
E
Vd1, Vd2
S
Type
Input RF
Vd
Output RF
Decoupling
N/A
100pF & 10nF
N/A
Comment
Inductance (Lbonding≈750µm) = 0.6nH,
1 gold wire with diameter of 25µm
Drain Supply
Inductance 1nH
Inductance (Lbonding≈500µm) = 0.4nH,
1 gold wire with diameter of 25µm
Ref. : DSCHA21102181 - 29 Jun 12
7/10 Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CHA2110-98F.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CHA2110-98F | 7-12GHz LNA | United Monolithic Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |