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LB11868V 데이터시트 PDF




ON Semiconductor에서 제조한 전자 부품 LB11868V은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 LB11868V 기능
기능 Variable Speed Single-phase Full-wave Pre-driver
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LB11868V 데이터시트, 핀배열, 회로
Ordering number : ENA1915A
LB11868V
Monolithic Digital IC
For Fan Motor
Variable Speed Single-phase
Full-wave Pre-driver
http://onsemi.com
Overview
LB11868V is a single-phase bipolar driving motor pre-driver with the variable speed function compatible with external
PWM signal. With a few external parts, a highly-efficient and highly-silent variable drive fan motor with low power
consumption can be achieved. This product is best suited for driving of the server requiring large air flow and large
current and the fan motor of consumer appliances.
Features
Single-phase full-wave driving pre-driver
Variable speed control possible with external PWM input
Current limiting circuit incorporated
Reactive current cut circuit incorporated
Minimum speed setting pin
Soft start setting pin
Start setting pin of on time
Pch-FET kickback absorption setting pin
Lock protection and automatic reset circuits incorporated
FG (rotational speed detection) output, RD (lock detection) output
Thermal shutdown circuit incorporated
Semiconductor Components Industries, LLC, 2013
May, 2013
51311 SY/11911 SY 20101217-S00010 No.A1915-1/11




LB11868V pdf, 반도체, 판매, 대치품
Package Dimensions
unit : mm (typ)
3360
5.2
20
12
0.5
(0.35)
0.22
0.15
SANYO : SSOP20J(225mil)
Block Diagram
LB11868V
Pd max -- Ta
1
Mounted on a specified board:
114.3×76.1×1.6mm3, glass epoxy
0.8
0.6
0.4
0.35
0.2
0
-30
0
30
60
9095
120
Ambient temperature, Ta -- C
No.A1915-4/11

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LB11868V 전자부품, 판매, 대치품
LB11868V
*15. KBSET pin
Pch kickback absorption circuit setting pin.
Open: The kickback absorption circuit is activated at a VCC voltage of 7.4V (typ) or above.
Pull-down to GND: Always OFF
Pull-up to REG: Always ON (but when the IC power is OFF, the kickback absorption circuit is OFF)
If the Pch load is to be reduced due to the large fan current, short the KBSET pin to GND, and use a zener diode
between the power supply on the power side and GND.
Kickback absorption circuit ON: At OUTPOFF, the OUTP voltage is clamped at VCC + 0.85V (at room temperature
and inflow current 5mA (typ)).
Kickback absorption circuit OFF: At OUTPOFF, the OUTP voltage is clamped at 18V or so (at room temperature and
inflow current 5mA (typ)) in order to protect the pin.
At OUTPOFF, the maximum inflow current must not be exceeded.
*16. Pch FET
If the Pch kickback absorption circuit is activated and a zener diode between the power supply and GND is not used,
the kickback during phase switching is absorbed by Pch.
Since the circuit is activated with a high voltage difference between the drain and source, select a FET with
sufficiently high capability.
*17. Nch FET
If the Nch gate voltage fluctuates significantly due to the effects of switching, insert a capacitor between the gate and
GND.
Since an Nch diode is used during coil current regeneration, select a FET with sufficiently high capability.
No.A1915-7/11

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관련 데이터시트

부품번호상세설명 및 기능제조사
LB11868V

Variable Speed Single-phase Full-wave Pre-driver

Sanyo Semicon Device
Sanyo Semicon Device
LB11868V

Variable Speed Single-phase Full-wave Pre-driver

ON Semiconductor
ON Semiconductor

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