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부품번호 | LB11868V 기능 |
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기능 | Variable Speed Single-phase Full-wave Pre-driver | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 11 페이지수
Ordering number : ENA1915A
LB11868V
Monolithic Digital IC
For Fan Motor
Variable Speed Single-phase
Full-wave Pre-driver
http://onsemi.com
Overview
LB11868V is a single-phase bipolar driving motor pre-driver with the variable speed function compatible with external
PWM signal. With a few external parts, a highly-efficient and highly-silent variable drive fan motor with low power
consumption can be achieved. This product is best suited for driving of the server requiring large air flow and large
current and the fan motor of consumer appliances.
Features
• Single-phase full-wave driving pre-driver
• Variable speed control possible with external PWM input
• Current limiting circuit incorporated
• Reactive current cut circuit incorporated
• Minimum speed setting pin
• Soft start setting pin
• Start setting pin of on time
• Pch-FET kickback absorption setting pin
• Lock protection and automatic reset circuits incorporated
• FG (rotational speed detection) output, RD (lock detection) output
• Thermal shutdown circuit incorporated
Semiconductor Components Industries, LLC, 2013
May, 2013
51311 SY/11911 SY 20101217-S00010 No.A1915-1/11
Package Dimensions
unit : mm (typ)
3360
5.2
20
12
0.5
(0.35)
0.22
0.15
SANYO : SSOP20J(225mil)
Block Diagram
LB11868V
Pd max -- Ta
1
Mounted on a specified board:
114.3×76.1×1.6mm3, glass epoxy
0.8
0.6
0.4
0.35
0.2
0
-30
0
30
60
9095
120
Ambient temperature, Ta -- C
No.A1915-4/11
4페이지 LB11868V
*15. KBSET pin
Pch kickback absorption circuit setting pin.
Open: The kickback absorption circuit is activated at a VCC voltage of 7.4V (typ) or above.
Pull-down to GND: Always OFF
Pull-up to REG: Always ON (but when the IC power is OFF, the kickback absorption circuit is OFF)
If the Pch load is to be reduced due to the large fan current, short the KBSET pin to GND, and use a zener diode
between the power supply on the power side and GND.
Kickback absorption circuit ON: At OUTPOFF, the OUTP voltage is clamped at VCC + 0.85V (at room temperature
and inflow current 5mA (typ)).
Kickback absorption circuit OFF: At OUTPOFF, the OUTP voltage is clamped at 18V or so (at room temperature and
inflow current 5mA (typ)) in order to protect the pin.
At OUTPOFF, the maximum inflow current must not be exceeded.
*16. Pch FET
If the Pch kickback absorption circuit is activated and a zener diode between the power supply and GND is not used,
the kickback during phase switching is absorbed by Pch.
Since the circuit is activated with a high voltage difference between the drain and source, select a FET with
sufficiently high capability.
*17. Nch FET
If the Nch gate voltage fluctuates significantly due to the effects of switching, insert a capacitor between the gate and
GND.
Since an Nch diode is used during coil current regeneration, select a FET with sufficiently high capability.
No.A1915-7/11
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ LB11868V.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
LB11868V | Variable Speed Single-phase Full-wave Pre-driver | Sanyo Semicon Device |
LB11868V | Variable Speed Single-phase Full-wave Pre-driver | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |