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Número de pieza | NXH80T120L2Q0PG | |
Descripción | Neutral Point Clamp Module | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NXH80T120L2Q0PG,
NXH80T120L2Q0SG
T-Type, Neutral Point
Clamp Module
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes for sine
wave inverter applications.
Features
• Extremely Efficient Trench IGBT with Fieldstop Technology
• Module Design Offers High Power Density
• Low Inductive Layout
• Q0PACK Package with Press−Fit Pins
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
BRIDGE IGBT
Collector−emitter voltage
Collector current
Th = 80°C
Pulsed Collector Current, Tpulse Limited
by Tjmax
Gate−emitter voltage
Power Dissapation per IGBT
Tj = Tjmax
Th = 80°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 600 V, TJ ≤ 150°C
NEUTRAL POINT IGBT
VCES
IC
ICM
VGE
Ptotal
TSC
1200
65
260
±20
146
10
V
A
A
V
W
ms
Collector−emitter voltage (Bridge)
VCES 600 V
Collector current
@ Th = 80°C
IC
59 A
Pulsed Collector Current, Tpulse Limited
ICM
235
A
by Tjmax
Gate−emitter voltage
VGE ±20 V
Power Dissapation per IGBT
Ptotal 66 W
Tj = Tjmax
Th = 80°C
Short Circuit Withstand Time
VGE = 15 V, VCE = 400 V, TJ ≤ 150°C
TSC
5 ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
80 A, 1200 V (Bridge)
50 A, 600 V (Neutral Point Clamp)
T – Type Neutral Point Clamp
Q0PACK
CASE 180AA
Q0PACK
CASE 180AB
SCHEMATIC
20 L11 19
T
5,14
L7
15,16
17
L2
18
L8
7 6 13 12
L3 L4
3,4
2
L1
1
L6
8,9
10,11
L5
MARKING DIAGRAM
XXXXXXXXXXXXXXXX
YYWW
YYWW = Year and Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 1
1
Publication Order Number:
NXH80T120L2Q0/D
1 page NXH80T120L2Q0PG, NXH80T120L2Q0SG
350
300
250
200
150
100
50
0
0
HALF BRIDGE CHARACTERISTICS
20 V to 15 V
13 V
350
300
20 V to 15 V
TJ = 25°C
11 V
10 V
9V
8V
7V
1 23 4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
5
250
200
150
100
50
0
0
TJ = 150°C
13 V
11 V
10 V
9V
8V
7V
123 4
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 2. Output Characteristics
5
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 150°C
TJ = 25°C
1 2 3 4 5 6 7 8 9 10
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Typical Transfer Characteristics
11
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 25°C
TJ = 150°C
123 456
VF, FORWARD VOLTAGE (V)
Figure 4. Diode Forward Characteristics
7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VGE = 15 V
TJ = 150°C
VCE = 350 V
RG = 4 W
Eoff
Eon
10 20 30 40 50 60 70 80 90 100
IC (A)
Figure 5. Typical Switching Loss vs. IC
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
VGE = 15 V
TJ = 150°C
VCE = 350 V
Eoff
Eon
5 10 15 20
RG (W)
Figure 6. Typical Switching Loss vs. RG
25
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5
5 Page NXH80T120L2Q0PG, NXH80T120L2Q0SG
NEUTRAL POINT CHARACTERISTICS
10
9
8
7
6
5
4
3 VGE = 15 V
2
TJ = 150°C
VCE = 350 V
1 RG = 4 W
0
0 10 20 30 40 50 60 70 80 90 100
IC (A)
Figure 33. Typical Reverse Recovery Charge
vs. IC
10
9
8
7
6
5
4
3
2
1
0
02
46
VGE = 15 V
TJ = 150°C
VCE = 350 V
IC = 56 A
8 10 12 14 16
RG (W)
Figure 34. Typical Reverse Recovery Charge
vs. RG
120 120
VGE = 15 V
VGE = 15 V
100
TJ = 150°C
VCE = 350 V
100
TJ = 150°C
VCE = 350 V
RG = 4 W
IC = 56 A
80 80
60 60
40 40
20
0
0 10 20 30 40 50 60 70 80 90 100
IC (A)
Figure 35. Typical Reverse Recovery Current
vs. IC
2500
2000
1500
VGE = 15 V
TJ = 150°C
VCE = 350 V
RG = 4 W
20
0
02
46
8 10 12 14 16
RG (W)
Figure 36. Typical Reverse Recovery Current
vs. RG
2500
2000
1500
VGE = 15 V
TJ = 150°C
VCE = 350 V
IC = 56 A
1000
1000
500
0
0 10 20 30 40 50 60 70 80 90 100
IC (A)
Figure 37. Typical di/dt vs. IC
500
0
0
5 10 15 20
RG (W)
Figure 38. Typical di/dt vs. RG
25
www.onsemi.com
11
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