1N3766 Datasheet PDF - GeneSiC
| Part Number | 1N3766 | |
| Description | Silicon Standard Recovery Diode | |
| Manufacturers | GeneSiC | |
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Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 700 V to 1000 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3765 thru 1N3768R
VRRM = 700 V - 1000 V
IF = 35 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 140 °C
TC = 25 °C, tp = 8.3 ms
700 800 900
490 560 630
700 800 900
35 35 35
475 475 475
-55 to 150 -55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
1000
700
1000
35
475
-55 to 150
-55 to 150
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Unit
Diode forward voltage
VF IF = 35 A, Tj = 25 °C 1.2 1.2 1.2 1.2 V
Reverse current
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 140 °C
10
10
10
10
10
10
10 μA
10 mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.25 0.25 0.25 0.25 °C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 1N3766 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 1N3766.PDF Datasheet ] | |
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