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PDF BUK661R8-30C Data sheet ( Hoja de datos )
| Número de pieza | BUK661R8-30C | |
| Descripción | N-channel TrenchMOS intermediate level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK661R8-30C
N-channel TrenchMOS intermediate level FET
Rev. 2.1 — 18 August 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Min Typ Max Unit
Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
VGS = 10 V; Tmb = 25 °C; [1] - - 120 A
see Figure 1
Tmb = 25 °C; see Figure 2 - - 263 W
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
- 1.6 1.9 mΩ
1 page  
NXP Semiconductors
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 0.57 K/W
003aae291
1
Zth (K/W)
δ = 0.5
10-1 0.2
0.1
0.05
0.02
10-2
P δ = tp
T
single shot
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1 tp (s )
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK661R8-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 18 August 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK661R8-30C
N-channel TrenchMOS intermediate level FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
BUK661R8-30C v.2.1 20110818
Product data sheet
Modifications:
• Various changes to content.
BUK661R8-30C v.2 20101228
Product data sheet
Change notice
-
-
Supersedes
BUK661R8-30C v.2
BUK661R8-30C v.1
BUK661R8-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2.1 — 18 August 2011
© NXP B.V. 2011. All rights reserved.
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