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| Número de pieza | BUK952R8-30B | |
| Descripción | N-channel TrenchMOS logic level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK952R8-30B
N-channel TrenchMOS logic level FET
Rev. 3 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 5 V; Tmb = 25 °C;
see Figure 3; see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C
VGS = 5 V; ID = 25 A;
Tj = 25 °C; see Figure 11;
see Figure 12
Min Typ Max Unit
- - 30 V
[1] - - 75 A
- - 300 W
- 2 2.4 mΩ
- 2.4 2.8 mΩ
1 page  
NXP Semiconductors
BUK952R8-30B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in still air
Min Typ Max Unit
- - 0.5 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
03ng28
P
tp
δ=
T
Single Shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
t
10−1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK952R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK952R8-30B
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history
Document ID
BUK952R8-30B v.3
Modifications:
BUK95_962R8_30B v.2
(9397 750 10273)
Release date Data sheet status
Change notice Supersedes
20110208
Product data sheet
-
BUK95_962R8_30B v.2
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK952R8-30B separated from data sheet BUK95_962R8_30B v.2.
20021014
Product data
-
BUK95_962R8_30B v.1
BUK952R8-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 February 2011
© NXP B.V. 2011. All rights reserved.
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