DataSheet.es    


PDF PXAC192908FV Data sheet ( Hoja de datos )

Número de pieza PXAC192908FV
Descripción Thermally-Enhanced High Power RF LDMOS FET
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de PXAC192908FV (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! PXAC192908FV Hoja de datos, Descripción, Manual

PXAC192908FV
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 1930 – 1995 MHz
Description
The PXAC192908FV is a 240-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1995 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PXAC192908FV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 600 mA, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24 60
20 Efficiency
40
16 20
12
Gain
0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
c192908fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Asymmetric Doherty design
- Main: P1dB = 120 W Typ
- Peak: P1dB = 220 W Typ
• Typical Pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P1dB = 240 W
- Efficiency = 54%
- Gain = 14 dB
• Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
• Integrated ESD protection
• Human Body Model, Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 0.6 A, VGS(PEAK) = 0.55 V, POUT = 70 W avg, ƒ1 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
13
45
Typ
14
49
–28
Max
–25
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.3, 2016-06-17

1 page




PXAC192908FV pdf
Reference Circuit , 1930 – 1990 MHz
PXAC192908FV_IN_04_D
R803 C803 C802
R801
C801
S3
S2 S1
R103
R102
C102 C101
R101
C103
C104
C105
RF
IN U1
C107 C106
C110
R107
R105
S4
R104
C109 C108
R106
RO4350_0 .508
(61)
Reference circuit assembly diagram (not to scale)
PXAC192908FV
PXAC192908FV_OUT_04_D
C204
C203
C202
C201
C205 C206 C207 C208
C217
C229
C230
C218
C219
C222
C220 C221
C223 C225
C224
C226
RF
C227 OUT
C209
C210
C211
C212
C228
C213 C214 C215 C216
RO4350_0 .508
C231
C232
(194)
pxac192908fv_CD_12-09-2014
Data Sheet
5 of 9
Rev. 02.3, 2016-06-17

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet PXAC192908FV.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PXAC192908FVThermally-Enhanced High Power RF LDMOS FETInfineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar