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PDF SQ4917EY Data sheet ( Hoja de datos )
| Número de pieza | SQ4917EY | |
| Descripción | Automotive Dual P-Channel MOSFET | |
| Fabricantes | Vishay | |
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SQ4917EY
Vishay Siliconix
Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A) per leg
Configuration
SO-8 Dual
D2
D2 5
D1 6
D1 7
8
-60
0.0480
0.0612
-8
Dual
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified c
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
S1 S2
G1 G2
4
3 G2
2 S2
1 G1
S1
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D1 D2
P-Channel MOSFET P-Channel MOSFET
SO-8
SQ4917EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Current a
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation a
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
-60
± 20
-8
-4.75
-4.5
-32
-22.4
25
5
1.67
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount b
SYMBOL
RthJA
RthJF
LIMIT
110
30
UNIT
°C/W
S14-1010-Rev. B, 19-May-14
1
Document Number: 62785
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100 IDM Limited
SQ4917EY
Vishay Siliconix
2
1
Duty Cycle = 0.5
10
Limited by RDS(on)*
1
0.1
TC = 25 °C
Single Pulse
100 μs
1 ms
BVDSS Limited
10 ms
100 ms
1s
10 s, DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100 600
Normalized Thermal Transient Impedance, Junction-to-Ambient
S14-1010-Rev. B, 19-May-14
5
Document Number: 62785
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
Return to Index
Return to Index
0.022
(0.559)
0.050
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SQ4917EY.PDF ] | |
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