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PDF TLI4963-2M Data sheet ( Hoja de datos )
| Número de pieza | TLI4963-2M | |
| Descripción | High Precision Automotive Hall Effect Latch | |
| Fabricantes | Infineon | |
| Logotipo |  |
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High Precision Hall Effect Latch
for 5V Applications
TLI4963-2M
SP000930186
Hall Effect Latch
Data Sheet
Revision 1.0, 2016-01-11
Sense & Control
1 page  
TLI4963-2M
Product Description
1 Product Description
1.1 Overview
The TLI4963-2M is a high precision Hall effect sensor with a latch characteristic and highly accurate switching
thresholds for operating temperatures up to 125°C.
Characteristic
Hall
Effect Latch
Supply Voltage
3.0 ~ 5.5 V
Supply Current
1.5 mA
Sensitivity
High
BOP:+5.0 mT
BRP: -5.0 mT
Interface
Open Drain
Output
Temperature
-40°C to 125°C
Figure 1 Image of TLI4963-2M in the PG-SOT23-3-15 Package
1.2 Features
• 3.0 V to 5.5 V operating supply voltage
• Operation from regulated power supply
• Active error compensation
• High stability of magnetic thresholds
• Low jitter (typ. 0.28 μs)
• 4kV ESD (HBM) performance
• Small SMD package PG-SOT23-3-15
• For industrial and consumer applications, not qualified for automotive applications
1.3 Target Applications
Target applications for the TLI4963-2M Hall switch are all applications which require a high precision Hall
Switch with an operating temperature range from -40°C to 125°C.
The magnetic behavior as a latch and switching thresholds of typical 5mT makes the device especially suited
for the use with a pole wheel for index counting applications e.g. power closing and window lifter or brush less
DC motors for commutation.
Table 1 Ordering Information
Product Name
Product Type
TLI4963-2M
Hall Latch
Ordering Code
SP000930186
Package
PG-SOT23-3-15
Data Sheet
5 Revision 1.0, 2016-01-11
5 Page 
TLI4963-2M
Specification
3.2 Absolute Maximum Ratings
Table 3 Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
Supply voltage
Output voltage
Ambient
temperature1)
VDD -0.3
VQ -0.5
TA -40
6V
6V
150 °C for 2000h (not additive)
Thermal resistance
Junction ambient
RthJA
300 K/W for PG-SOT23-3-15 (2s2p)
Thermal resistance
Junction lead
RthJL
100 K/W for PG-SOT23-3-15
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such statement.
The lifetime statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):
e.g. for: VDD = 5 V, IS = 2 mA, VQSAT = 0.5 V, IQ = 1 mA
Power dissipation: PDIS = 5 V x 2 mA + 0.5 V x 1 mA = 10 mW + 0.5 mW = 10.5 mW
Temperature ΔT = RthJA x PDIS = 300 K/W x 10.5 mW = 3.15 K
For TA = 150 °C: TJ = TA + ΔT = 150 °C + 3.15 K = 153.15 °C
Table 4 ESD Protection1) (TA = 25°C)
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
ESD voltage (HBM)2)
ESD voltage (CDM)3)
VESD
-4
-1
4 kV R = 1.5 kΩ, C = 100 pF
1 kV
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
3) Charged Device Model (CDM), ESD susceptibility according to JEDEC JESD22-C101.
Data Sheet
11 Revision 1.0, 2016-01-11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet TLI4963-2M.PDF ] | |
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