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Número de pieza | TLV4961-1T | |
Descripción | High Precision Hall Effect Latch | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TLV4961-1T (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! High Precision Hall Effect Latch for Consumer
Applications
Hall Effect Latch
TLV4961-1T
TLV4961-1TA
TLV4961-1TB
TLV4961-1T
Data Sheet
Revision 1.0, 2015-05-19
Sense & Control
1 page TLV4961-1T
Product Description
1 Product Description
1.1 Overview
Characteristic
Latch
Supply Voltage
3.0~26 V
Supply Current
1.6 mA
Sensitivity
BOP: 2 mT
BRP: -2 mT
1)
Interface
Open Drain
Output
Temperature TA
-40 °C to 125 °C
Figure 1 Image of TLV4961-1T TO92S-3-1 TO92S-3-2
1.2 Features
• 3.0 V to 26 V operating supply voltage
• Operation from unregulated power supply
• Output overcurrent & overtemperature protection
• Active error compensation
• High stability of magnetic thresholds
• High ESD performance
• Leaded, halogen-free package TO92S-3-1 for TLV4961-1TA, TO92S-3-2 for TLV4961-1TB
1.3 Target Applications
Target applications for the TLV496x Hall switch family are all applications which require a high precision Hall
Latch with an operating temperature range from -40 °C to 125 °C.
The magnetic behavior as a latch and switching thresholds of typical ±2 mT make the device especially suited
for the use with a pole wheel for index counting applications, for rotor position detection as in brushless DC
motor commutation and for white goods or open/closing detection.
For automotive applications please refer to the Infineon TLE Hall Switches series.
Table 1 Ordering Information
Product Name
Product Type
TLV4961-1TA
Hall Latch
TLV4961-1TB
Hall Latch
Ordering Code
SP001274772
SP001283610
Package
TO92S-3-1 (Bulk)
TO92S-3-2 (Ammo pack)
1) Only the package is halogen-free.
Data Sheet
5
Revision 1.0, 2015-05-19
5 Page TLV4961-1T
Specification
3.2 Absolute Maximum Ratings
Table 3 Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
Supply voltage1)
VDD 3
Output voltage
VQ -0.5
Reverse output current
IQ
-70
Junction temperature1)
TJ
-40
Storage temperature TS -40
Thermal resistance
Junction ambient
RthJA
–
–
–
–
–
–
–
26 V –
26 V –
– mA –
150 °C –
150 °C –
250 K/W for TO92S-3 (2s2p)
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such
statement. The lifetime statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip:
e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA
Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW
Temperature ∆T = RthJA x PDIS = 250 K/W x 40 mW = 10 K
For TA = 50 °C: TJ = TA + ∆T = 50 °C + 10 K = 60 °C
Table 4 ESD Protection1) (TA = 25 °C)
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
ESD voltage (HBM)2)
VESD -4
–
4
kV R = 1.5 kΩ, C = 100 pF
ESD voltage (CDM)3)
VESD -1
–
1
kV –
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
3) Charge device model (CDM) tests according to JESD22-C101.
Data Sheet
11 Revision 1.0, 2015-05-19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet TLV4961-1T.PDF ] |
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