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PDF TLV4964-5T Data sheet ( Hoja de datos )

Número de pieza TLV4964-5T
Descripción High Precision Hall Effect Switch
Fabricantes Infineon 
Logotipo Infineon Logotipo



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High Precision Hall Effect Switch for Consumer
Applications
Hall Effect Switch
TLV4964-5T
TLV4964-5TA
TLV4964-5TB
TLV4964-5T
Data Sheet
Revision 1.0, 2015-05-18
Sense & Control

1 page




TLV4964-5T pdf
TLV4964-5T
Product Description
1 Product Description
1.1 Overview
Characteristic
Hall
Effect Switch
Supply Voltage
3.0~26 V
Supply Current
1.6 mA
Sensitivity
BOP: 7.5 mT
BRP: 5.0 mT
1)
Interface
Open Drain
Output
Temperature TA
-40 °C to 125 °C
Figure 1 Image of TLV4964-5T TO92S-3-1 TO92S-3-2
1.2 Features
• 3.0 V to 26 V operating supply voltage
• Operation from unregulated power supply
• Output overcurrent & overtemperature protection
• Active error compensation
• High stability of magnetic thresholds
• High ESD performance
• Leaded, halogen-free package TO92S-3-1 for TLV4964-5TA, TO92S-3-2 for TLV4964-5TB
1.3 Target Applications
Target applications for the TLV496x Hall switch family are all applications which require a high precision Hall
Switch with an operating temperature range from -40 °C to 125 °C.
The TLV4964-5T is a unipolar switch with a typical operating point BOP = 7.5 mT and a hysteresis of
BHYS = 2.5 mT. It is ideally suited for various position detection applications.
For automotive applications please refer to the Infineon TLE Hall Switches series.
Table 1 Ordering Information
Product Name
Product Type
TLV4964-5TA
Hall Switch
TLV4964-5TB
Hall Switch
Ordering Code
SP001274784
SP001283590
Package
TO92S-3-1 (Bulk)
TO92S-3-2 (Ammo pack)
1) Only the package is halogen-free.
Data Sheet
5
Revision 1.0, 2015-05-18

5 Page





TLV4964-5T arduino
TLV4964-5T
Specification
3.2 Absolute Maximum Ratings
Table 3 Absolute Maximum Rating Parameters
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
Supply voltage1)
Output voltage
Reverse output current
Junction temperature1)
Storage temperature
Thermal resistance
Junction ambient
VDD
VQ
IQ
TJ
TS
RthJA
3
-0.5
-70
-40
-40
26 V –
26 V –
– mA –
150 °C –
150 °C –
250 K/W for TO92S-3-2 (2s2p)
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual
lifetime of a component depends on its form of application and type of use etc. and may deviate from such
statement. The lifetime statement shall in no event extend the agreed warranty period.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Calculation of the dissipated power PDIS and junction temperature TJ of the chip:
e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA
Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW
Temperature T = RthJA x PDIS = 250 K/W x 40 mW = 10 K
For TA = 50 °C: TJ = TA + T = 50 °C + 10 K = 60 °C
Table 4 ESD Protection1) (TA = 25 °C)
Parameter
Symbol
Values
Unit Note or Test Condition
Min. Typ. Max.
ESD voltage (HBM)2)
VESD -4
4
kV R = 1.5 k, C = 100 pF
ESD voltage (CDM)3)
VESD -1
1
kV –
1) Characterization of ESD is carried out on a sample basis, not subject to production test.
2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.
3) Charge device model (CDM) tests according to JESD22-C101.
Data Sheet
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