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Número de pieza | DMT6007LFG | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
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N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
60V
RDS(ON) Max
6mΩ @ VGS = 10V
8.5mΩ @ VGS = 4.5V
ID Max
TC = +25°C
80A
70A
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized
Excellent Qgd ×RDS(ON) Product (FOM)
Advanced Technology for DC-DC Converters
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area by enabling smaller end
products
100% UIS (Avalanche) Rated
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Synchronous Rectifier
Backlighting
Power Management Functions
DC-DC Converters
S Pin 1
S
S
G
D
D
D
D
Bottom View
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminal Finish — Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
POWERDI®3333-8
D
Top View
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT6007LFG-7
DMT6007LFG-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
POWERDI is a registered trademark of Diodes Incorporated.
DMT6007LFG
Document number: DS37335 Rev. 2 - 2
1 of 8
www.diodes.com
November 2015
© Diodes Incorporated
1 page DMT6007LFG
0.014
2.5
0.012
0.01
0.008
VGS = 4.5V, ID = 15A
2
ID = 1mA
1.5
0.006
0.004
0.002
VGS = 10V, ID = 10A
1 ID = 250μA
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
25
VGS = 0V
20
0
-50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
150
10000
f=1MHz
Ciss
1000
15
10
TA = 125oC
5 TA = 150oC
TA = 85oC
TA = 25oC
TA = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1.5
Coss
100
10 Crss
1
0
10 20 30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
40
10 1000
9
RDS(ON) Limited
PW =100µs
8 100 PW =1ms
7
6
5
4
VDS = 30V, ID = 20A
3
2
1
0
0 5 10 15 20 25 30 35 40 45
Qg (nC)
Figure 11. Gate Charge
10
1
0.1
0.01
PW =10ms
PW =100ms
PW =1s
TJ(Max) = 150℃ TA = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
PW =10s
DC
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMT6007LFG
Document number: DS37335 Rev. 2 - 2
5 of 8
www.diodes.com
November 2015
© Diodes Incorporated
5 Page |
Páginas | Total 8 Páginas | |
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