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부품번호 | 3LN01C 기능 |
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기능 | N-Channel Small Signal MOSFET | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
Ordering number : EN6260C
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7Ω, Single CP
http://onsemi.com
Features
• Low ON-resistance
• Ultrahigh-speed switching
• 2.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
30
±10
0.15
0.6
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-013
2.9 0.1 3LN01C-TB-E
3 3LN01C-TB-H
Ordering & Package Information
Device
Package
Shipping
3LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
memo
Pb-Free
Pb-Free
and
Halogen Free
1
0.95
2
0.4
1 : Gate
2 : Source
3 : Drain
CP
Packing Type: TB
TB
Marking
YA
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
3LN01C
IS -- VSD
1.0
7 VGS=0V
5
3
2
0.1
7
5
3
2
0.01
0.5
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD -- V
IT00037
Ciss, Coss, Crss -- VDS
f=1MHz
10
Ciss
7
5 Coss
3
2 Crss
1.0
0 2 4 6 8 10 12 14 16 18 20
Drain to Source Voltage, VDS -- V IT00039
PD -- Ta
0.30
1000
7
5
3
2
100
7
5
3
2
tf
SW Time -- ID
VDD=15V
VGS=4V
td(off)
tr
td(on)
10
0.01
2
10
VDS=10V
9 ID=150mA
8
3 5 7 0.1
Drain Current, ID -- A
VGS -- Qg
2
IT00038
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg -- nC
IT00040
0.25
0.20
0.15
0.10
0.05
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT00041
No.6260-4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ 3LN01C.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
3LN01C | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
3LN01C | N-Channel Small Signal MOSFET | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |