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부품번호 | VFT3080C-E3 기능 |
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기능 | Dual Trench MOS Barrier Schottky Rectifier | ||
제조업체 | Vishay | ||
로고 | |||
전체 5 페이지수
VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3080C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VFT3080C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VBT3080C
PIN 1
K
PIN 2
HEATSINK
VIT3080C
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
80 V
150 A
0.65 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
VAC
Operating junction and storage temperature range
TJ, TSTG
VT3080C
VFT3080C VBT3080C
80
30
15
150
160
1.0
1500
-55 to +150
VIT3080C UNIT
V
A
A
mJ
A
V
°C
Revision: 22-Dec-14
1 Document Number: 89168
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.411 (10.45) MAX.
TO-262AA
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
K
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
123
0.510 (12.95)
0.470 (11.94)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.022 (0.56)
0.014 (0.35)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 22-Dec-14
4 Document Number: 89168
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
VFT3080C-E3 | Dual Trench MOS Barrier Schottky Rectifier | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |