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IRFPS40N60K 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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IRFPS40N60K 데이터시트, 핀배열, 회로
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
330
84
150
Single
0.110
D
Super-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Hard Switching Primary or PFC Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
Super-247
IRFPS40N60KPbF
SiHFPS40N60K-E3
IRFPS40N60K
SiHFPS40N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a).
c. ISD 38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
40
24
160
4.5
600
40
57
570
7.5
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11
www.vishay.com
1




IRFPS40N60K pdf, 반도체, 판매, 대치품
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
100000
10000
VGS = 0V, f = 1 MHZ
CCirssss
=
=
CCggsd+
Cgd,
Cds
Coss = Cds + Cgd
SHORTED
Ciss
1000
100
Coss
Crss
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1000
100
TJ= 150 °C
10
TJ= 25 °C
1
0.1
0.2
0.6 0.9
V SD,Source-to-Drain Voltage (V)
V GS = 0 V
1.3
1.6
Fig. 7 - Typical Source-Drain Diode Forward Voltage
12
ID = 38A
10
VDS = 480V
VDS = 300V
VDS = 120V
7
5
2
0
0 50 100 150 200 250
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10msec
100 1000 10000
VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11

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IRFPS40N60K 전자부품, 판매, 대치품
IRFPS40N60K, SiHFPS40N60K
Vishay Siliconix
D.U.T.
+
-
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
-+
Rg
dV/dt controlled by Rg
+
Driver same type as D.U.T.
ISD controlled by duty factor “D”
- VDD
D.U.T. - device under test
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
Ripple 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
VDD
ISD
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91261.
Document Number: 91261
S11-0112-Rev. B, 31-Jan-11
www.vishay.com
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