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PDF FGB40N60SM Data sheet ( Hoja de datos )
| Número de pieza | FGB40N60SM | |
| Descripción | Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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September 2013
FGB40N60SM
600 V, 40 A Field Stop IGBT
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
• IR Reflow Only
Applications
• Welder, PFC
General Description
Using novel field stop IGBT technology, Fairchild’s new series
of field stop 2nd generation IGBTs offer the optimum
performance for welder and PFC applications where low
conduction and switching losses are essential.
C
COLLECTOR
(FLANGE)
TO-263AB/D2-PAK
GE
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
C
G
E
Ratings
600
± 20
± 30
80
40
120
349
174
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
W
W
oC
oC
oC
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Capacitance Characteristics
4000
3000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
2000
Cies
1000
0
0.1
Coes
Cres
1 10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-on Characteristics vs.
Gate Resistance
100
tr
30
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
1
0 10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 11. Switching Loss vs.
Gate Resistance
5
1
0.1
0
Eon
Eoff Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40
Gate Resistance, RG [Ω]
50
Figure 8. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
9
VCC = 200V
400V
300V
6
3
0
0 40 80 120
Gate Charge, Qg [nC]
Figure 10. Turn-off Characteristics vs.
Gate Resistance
1000
100
td(off)
tf
10
1
0
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
10 20 30 40 50
Gate Resistance, RG [Ω]
Figure 12. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
100 TC = 175oC
tr
10 td(on)
1
20 30 40 50 60 70 80
Collector Current, IC [A]
©2011 Fairchild Semiconductor Corporation
FGB40N60SM Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGB40N60SM.PDF ] | |
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