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부품번호 | 5N60K-MT 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
5N60K-MT
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N60K-MT is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.
FEATURES
* RDS(ON) < 2.2Ω @ VGS =10V, ID = 2.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N60KL-TF3-T
5N60KG-TF3-T
5N60KL-TF1-T
5N60KG-TF1-T
5N60KL-TF2-T
5N60KG-TF2-T
5N60KL-TF3T-T
5N60KG-TF3T-T
5N60KL-TM3-T
5N60KG-TM3-T
5N60KL-TMS-T
5N60KG-TMS-T
5N60KL-TN3-R
5N60KG-TN3-R
5N60KL-TND-R
5N60KG-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R205-038.B
5N60K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID = 250μA
600
Drain-Source Leakage Current
IDSS VDS =600V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS =30V, VDS = 0V
VGS =-30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID = 250μA
2.0
Static Drain-Source On-State Resistance
RDS(ON) VGS =10V, ID = 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID =0.5A, RG =25Ω
(Note 1, 2)
VDS=50V, ID=1.3A, VGS=10V
(Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 5A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Note: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
TYP
0.6
1.5
460
70
8
50
60
120
35
18
6.7
4.5
MAX UNIT
V
1 μA
100
-100
nA
V/°C
4.0 V
2.2 Ω
620 pF
90 pF
12 pF
ns
ns
ns
ns
nC
nC
nC
1.4 V
5A
20 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R205-038.B
4페이지 5N60K-MT
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
QW-R205-038.B
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5N60K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |