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PDF IDP08E65D2 Data sheet ( Hoja de datos )

Número de pieza IDP08E65D2
Descripción Emitter Controlled Diode
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IDP08E65D2 Hoja de datos, Descripción, Manual

Diode
RapidSwitchingEmitterControlledDiode
IDP08E65D2
EmitterControlledDiode
Datasheet
IndustrialPowerControl

1 page




IDP08E65D2 pdf
EmitterControlledDiode
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs,
Lσ=35nH,
Cσ=32pF,
switch IPW60R045CP
IDP08E65D2
min.
Value
typ.
max. Unit
- 23 - ns
- 0.11 - µC
- 7.4 - A
- -3300 - A/µs
- 40 - ns
- 0.08 - µC
- 2.5 - A
- -1300 - A/µs
Value
Unit
min. typ. max.
- 30 - ns
- 0.20 - µC
- 10.0 - A
- -2200 - A/µs
- 58 - ns
- 0.13 - µC
- 3.8 - A
- -2200 - A/µs
5 Rev.2.2,2014-08-28

5 Page










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