|
|
PDF 22NM60N Data sheet ( Hoja de datos )
| Número de pieza | 22NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 22NM60N (archivo pdf) en la parte inferior de esta página. Total 23 Páginas | ||
|
No Preview Available !
STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60N
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET
in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
Features
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
VDSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
RDS(on)
max.
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
ID
16 A
16 A
16 A
16 A
16 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
TO-247
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
Marking
22NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
January 2011
Doc ID 15853 Rev 4
1/23
www.st.com
23
1 page  
STB/F/I/P/W22NM60N
Table 7. Switching times
Symbol
Parameter
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
VDD = 300 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max Unit
11
18
-
74
38
ns
ns
-
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 16 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
16 A
-
64 A
- 1.6 V
296
-4
26.8
ns
µC
A
350
- 4.7
27
ns
µC
A
Doc ID 15853 Rev 4
5/23
5 Page 
STB/F/I/P/W22NM60N
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 23. TO-220FP drawing
L7
A
B
Dia
L6
H
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 15853 Rev 4
L4
7012510_Rev_K
11/23
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet 22NM60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 22NM60N | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |