|
|
PDF KF10N50F Data sheet ( Hoja de datos )
| Número de pieza | KF10N50F | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de KF10N50F (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
SEMICONDUCTOR
TECHNICAL DATA
KF10N50P/F/PZ/FZ
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=500V, ID=10A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.65 @VGS=10V
Qg(typ.)= 19.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL KF10N50P KF10N50F UNIT
KF10N50PZ KF10N50FZ
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
10 10*
5 5*
25 25*
300
14.7
4.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above 25
PD
130
1.04
41.5 W
0.33 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
RthJC
RthJA
0.96
62.5
3.0 /W
62.5 /W
* : Drain current limited by maximum junction temperature.
KF10N50P,KF10N50PZ
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
KF10N50F,KF10N50FZ
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
PIN CONNECTION
(KF10N50P, KF10N50F)
D
(KF10N50PZ, KF10N50FZ)
D
TO-220IS (1)
G
2008. 10. 29
G
S
Revision No : 1
S
1/7
1 page  
KF10N50P/F/PZ/FZ
100
Duty=0.5
Fig12. Transient Thermal Response Curve
(KF10N50P. KF10N50PZ)
10-1
0.2
0.1
0.05
10-2
0.02
0.01
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF10N50F. KF10N50FZ)
100 Duty=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
TIME (sec)
2008. 10. 29
Revision No : 1
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF10N50F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KF10N50F | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KF10N50FZ | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KF10N50P | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| KF10N50PZ | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |