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PDF 3SK263 Data sheet ( Hoja de datos )
| Número de pieza | 3SK263 | |
| Descripción | N-Channnel Dual Gate MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Ordering number : EN4423D
3SK263
N-Channnel Dual Gate MOSFET
15V,30mA,PG=21dB,NF=1.1dB, CP4
http://onsemi.com
Features
• Enhancement type
• Small noise figure
• Small cross modulation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate1-to-Source Voltage
Gate2-to-Source Voltage
Drain Current
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
Conditions
Ratings
15
±8
±8
30
200
125
--55 to +125
Unit
V
V
V
mA
mW
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7014A-006
2.9
0.4
43
3SK263-5-TG-E
0.1
Product & Package Information
• Package
: CP4
• JEITA, JEDEC
: SC-61, SC-82AB, SOT-143, SOT-343
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TG Marking
12
0.95 0.85
0.6
1 : Drain
2 : Source
3 : Gate1
4 : Gate2
CP4
TG
Electrical Connection
1
3
4
RJ
2
Semiconductor Components Industries, LLC, 2014
June, 2014
60914HK TA-4314/TKIM/82599TH(KT)/20696YK/63094MT(KOTO) No.4423-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 3SK263.PDF ] | |
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