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PDF MTB025C04H8 Data sheet ( Hoja de datos )
| Número de pieza | MTB025C04H8 | |
| Descripción | N- AND P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB025C04H8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTB025C04H8
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH
40V
7.3A
21A
18.3mΩ
26.6mΩ
P-CH
-40V
-6.6A
-19A
28.3mΩ
41.3mΩ
Equivalent Circuit
MTB025C04H8
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device
MTB025C04H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB025C04H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
40
Brekdown Voltage vs Ambient Temperature
1.4
35 6V 1.2
30 10V, 9V, 8V, 7V
25 1
5V
20
0.8
15 4.5V
10
5
0
0
VGS=3V
4V
3.5V
1 23 4
VDS, Drain-Source Voltage(V)
5
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=3V
VGS=4V
100
VGS=4.5V
10
0.01
VGS=10V
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=12A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
2 46 8
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2 VGS=10V, ID=12A
1.6
1.2
0.8
0.4 RDS(ON)@Tj=25°C : 18.3mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB025C04H8
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C955H8
Issued Date : 2015.11.02
Revised Date :
Page No. : 11/13
Carrier Tape Dimension
MTB025C04H8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTB025C04H8.PDF ] | |
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