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부품번호 | MTB3D0N03BQ8 기능 |
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기능 | N-Channel Logic Level Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C999Q8
Issued Date : 2015.10.20
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB3D0N03BQ8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
BVDSS
ID@ TA=25°C, VGS=10V
ID@ TC=25°C, VGS=10V
RDSON@VGS=10V, ID=18A
RDSON@VGS=4.5V, ID=15A
30V
19A
27A
3.1mΩ(typ)
4.0mΩ(typ)
Symbol
MTB3D0N03BQ8
Outline
Pin 1
SOP-8
G:Gate D:Drain S:Source
Ordering Information
Device
MTB3D0N03BQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB3D0N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C999Q8
Issued Date : 2015.10.20
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
100
10V,9V,8V,7V,6V,5V
80 4V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
60
40 3.5V
20
0
0
VGS=2.5V
3V
2468
VDS, Drain-Source Voltage(V)
10
1000
Static Drain-Source On-State resistance vs Drain Current
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
100
VGS=3V
10
VGS=4.5V
1
0.001
VGS=10V
0.01 0.1
1
10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=18A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.8
VGS=10V, ID=18A
2.4 RDSON@Tj=25°C : 3.1mΩ typ.
2
1.6
1.2
0.8
VGS=4.5V, ID=15A
0.4 RDSON@Tj=25°C : 4.0mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB3D0N03BQ8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C999Q8
Issued Date : 2015.10.20
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTB3D0N03BQ8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB3D0N03BQ8.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB3D0N03BQ8 | N-Channel Logic Level Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |