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부품번호 | MTB4D0N03BJ3 기능 |
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기능 | N-Channel Logic Level Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C092J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BJ3
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=20A
VGS=4.5V, ID=10A
30V
15A
56A
3.9mΩ
5.0mΩ
Equivalent Circuit
MTB4D0N03BJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device
MTB4D0N03BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C092J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
140
120 10V,9V,8V,7V,6V
100
5V
80
60 4V
40
20
0
0
3.5V
VGS=3V
12 34
VDS, Drain-Source Voltage(V)
5
1000
Static Drain-Source On-State resistance vs Drain Current
100
VGS=3V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
10
1
0.01
VGS=4.5V
VGS=10V
0.1 1
10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
ID=20A
160
120
80
40
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.6 Tj=150°C
0.4
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8 VGS=4.5V, ID=10A
2.4 RDSON @ Tj=25°C : 5.0 mΩ typ
2
1.6
1.2
0.8
VGS=10V, ID=20A
0.4 RDSON @ Tj=25°C : 3.9 mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB4D0N03BJ3
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C092J3
Issued Date : 2015.10.23
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTB4D0N03BJ3
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB4D0N03BJ3.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB4D0N03BJ3 | N-Channel Logic Level Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |