|
|
PDF MTB4D0N03BV8 Data sheet ( Hoja de datos )
| Número de pieza | MTB4D0N03BV8 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTB4D0N03BV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C092V8
Issued Date : 2015.10.21
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03BV8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
BVDSS
ID @ VGS=10V, TA=25°C
ID @ VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=18A
VGS=4.5V, ID=10A
30V
15A
43A
4.3mΩ
5.7mΩ
Equivalent Circuit
MTB4D0N03BV8
Outline
Pin 1
DFN3×3
G：Gate D：Drain S：Source
Ordering Information
Device
MTB4D0N03BV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03BV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C092V8
Issued Date : 2015.10.21
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss 1.2
C oss 1
ID=1mA
0.8
100 Crss
0.6 ID=250μA
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
VDS=15V
1
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100 RDSON
Limited
10
1
TA=25°C, Tj=150°C
0.1 VGS=10V, RθJA=50°C/W
Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
VDS=10V
6
4 VDS=15V
2
ID=15A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
18
16
14
12
10
8
6
4
2 TA=25°C, VGS=10V, RθJA=50°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB4D0N03BV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB4D0N03BV8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTB4D0N03BV8 | N-Channel Logic Level Enhancement Mode Power MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |