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Número de pieza | NVD6495NL | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NVD6495NL
N-Channel Power MOSFET
100 V, 25 A, 50 mW, Logic
Level
Features
• Low RDS(on)
• 100% Avalanche Tested
• AEC−Q101 Qualified
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current
Power Dissipation
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
VDSS
VGS
ID
PD
100
$20
25
18
83
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
80
−55 to
+175
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
IS
EAS
TL
25 A
79 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) − Steady State
RqJC
Junction−to−Ambient − Steady State (Note 1) RqJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1.8 °C/W
39
http://onsemi.com
V(BR)DSS
100 V
RDS(on) MAX
54 mW @ 4.5 V
50 mW @ 10 V
D
ID MAX
25 A
G
S
4
12
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
13
Gate 2 Source
Drain
6495NL
Y
WW
G
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NVD6495NL/D
1 page 10
1 Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01 SINGLE PULSE
0.001
0.000001
0.00001
NVD6495NL
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
0.1
1 10
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NVD6495NL.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVD6495NL | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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