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Número de pieza | CS8N65A8H | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | HUAJING MICROELECTRONICS | |
Logotipo | ||
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No Preview Available ! Silicon N-Channel Power MOSFET
CS8N65 A8H
○R
General Description:
CS8N65 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤1.3Ω)
l Low Gate Charge (Typical Data:28nC)
l Low Reverse transfer capacitances(Typical:14pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
Drain-to-Source Voltage
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
PD Derating Factor above 25°C
TJ,Tstg
TL
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650
8
110
0.9
Rating
650
8
5.5
32
±30
500
40
2.8
5.0
110
0.88
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page CS8N65 A8H
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
Figure 6
1.00E-02
1.00E-01
t Pulse Width , Seconds
Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
ID= 8A
ID= 4A
ID= 2A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
4
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25 ℃
1.1
1
0
12 4 6 8 10 12 14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=2.5A
2
1 VGS=10V
1.5
0.9
1
0.8 0.5
0.7 0
0123456
Id , Drain Current , Amps
-100 -50 0 50 100 150 200
Tj, Junction temperature ,C
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS8N65A8H.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS8N65A8H | Silicon N-Channel Power MOSFET | HUAJING MICROELECTRONICS |
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