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PDF SUD40N08-16 Data sheet ( Hoja de datos )
| Número de pieza | SUD40N08-16 | |
| Descripción | N-Channel 80V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD40N08-16
Vishay Siliconix
N-Channel 80-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
80 0.016 @ VGS = 10 V
TO-252
ID (A)
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
80
"20
40
30
60
40
40
80
136b
3a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71323
S-40272—Rev. C, 23-Feb-04
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
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Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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Document Number: 91000
Revision: 18-Jul-08
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