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SIRA00DP PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIRA00DP
기능 N-Channel 30V (D-S) MOSFET
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SIRA00DP 데이터시트, 핀배열, 회로
N-Channel 30 V (D-S) MOSFET
SiRA00DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () (Max.)
0.00100 at VGS = 10 V
0.00135 at VGS = 4.5 V
ID (A)a, g
100
100
Qg (Typ.)
66 nC
PowerPAK® SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information:
SiRA00DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Synchronous Rectification
• ORing
• High Power Density DC/DC
• VRMs and Embedded DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
+ 20, - 16
100g
100g
58b, c
47b, c
400
60g
5.6b, c
50
125
104
66.6
6.25b, c
4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
15
0.9
20
°C/W
1.2
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
g. Package limited.
Document Number: 63780
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-0828-Rev. B, 22-Apr-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIRA00DP pdf, 반도체, 판매, 대치품
SiRA00DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.005
TJ = 150 °C
10
0.004
TJ = 25 °C
1
0.003
ID = 20 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.5
0.002
0.001
TJ = 125 °C
TJ = 25 °C
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
200
0.2 160
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
120
80
40
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
1000
IDM Limited
100
ID Limited
10
100 μs
1 ms
10 ms
1
Limited by RDS(on)*
100 ms
1s
10 s
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
DC
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63780
4 S13-0828-Rev. B, 22-Apr-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIRA00DP 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
W
1
2
3
4
θ
2
E1
E
L1
θ
Z
A1
Detail Z
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
DIM.
MIN.
NOM.
MAX.
A 0.97 1.04 1.12
A1 - 0.05
b 0.33 0.41 0.51
c 0.23 0.28 0.33
D 5.05 5.15 5.26
D1 4.80 4.90 5.00
D2 3.56 3.76 3.91
D3 1.32 1.50 1.68
D4 0.57 typ.
D5 3.98 typ.
E 6.05 6.15 6.25
E1 5.79 5.89 5.99
E2 (for AL product)
E2 (for other product)
E3
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
3.30
3.48
3.68
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
3.66
3.84
3.91
K (for other product)
K1
H
L
L1
W
0.56
0.51
0.51
0.06
0.15
1.27 typ.
-
0.61
0.61
0.13
-
0.25
-
0.71
0.71
0.20
12°
0.36
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
0.125 typ.
Revison: 20-May-13
1
H
E2
L
K
E4
1
2
D
3
4
E3
Backside View of Single Pad
H
E2
K
E4
L
1
D1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.238
0.228
0.130
0.137
0.145
0.022
0.020
0.020
0.002
0.006
INCHES
NOM.
0.041
-
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
0.024
0.024
0.005
-
0.010
0.005 typ.
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
0.246
0.236
0.144
0.151
0.154
-
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
SIRA00DP

N-Channel 30V (D-S) MOSFET

Vishay
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