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SIS330DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS330DN
기능 N-Channel 30V (D-S) MOSFET
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SIS330DN 데이터시트, 핀배열, 회로
New Product
N-Channel 30 V (D-S) MOSFET
SiS330DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0056 at VGS = 10 V
0.0075 at VGS = 4.5 V
ID (A)f
35g
35g
Qg (Typ.)
11.2 nC
PowerPAK 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: SiS330DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook
• Server
• High-Side Switch
- Synchronous Buck Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
35g
35g
19.1a, b
17.5a, b
70
35g
3.3a, b
20
20
52
43
3.7a, b
3.1a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 67079
S10-2605-Rev. A, 15-Nov-10
www.vishay.com
1




SIS330DN pdf, 반도체, 판매, 대치품
New Product
SiS330DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
TJ = 150 °C
1
0.020
0.016
ID = 20 A
0.012
0.1
0.01
TJ = 25 °C
0.008
0.004
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.000
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.2
0.0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
80
60
40
20
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001 0.01 0.1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
4
Document Number: 67079
S10-2605-Rev. A, 15-Nov-10

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SIS330DN 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212, (Single/Dual)
W
18
45
Z
2
H E2 K L
E4
1
2
3
4
L1
θθ
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.79
A1 0
b 0.23
c 0.13
D 3.00
D1 2.95
D2 1.98
D4
E 3.00
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1
H 0.15
L 0.15
L1 0.051
θ
W 0.15
M
ECN: C15-0077-Rev. K, 26-Jan-15
DWG: 5882
MILLIMETERS
0.31 TYP.
0.535 TYP.
0.65 BSC
0.61
0.35
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.61
3.21
2.70
3.61
3.21
2.21
1.98
0.51
0.56
0.204
12°
0.36
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.031
0
0.009
0.005
0.118
0.116
0.078
0.118
0.116
0.058
0.069
0.006
0.006
0.002
0.006
INCHES
0.012 TYP.
0.021 TYP.
0.026 BSC
0.024
0.014
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.142
0.126
0.106
0.142
0.126
0.087
0.078
0.020
0.022
0.008
12°
0.014
Revison: 26-Jan-15
1 Document Number: 71656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS330DN

N-Channel 30V (D-S) MOSFET

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