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SIS332DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS332DN
기능 N-Channel 30V (D-S) MOSFET
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SIS332DN 데이터시트, 핀배열, 회로
New Product
N-Channel 30 V (D-S) MOSFET
SiS332DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30 0.0084 at VGS = 10 V
0.0110 at VGS = 4.5 V
ID (A)f
35g
35g
Qg (Typ.)
8.1 nC
PowerPAK 1212-8
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
APPLICATIONS
• High Side Switch
- POL
- Notebook PC
- Server
G
D
S
Ordering Information: SiS332DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
35g
35g
15.4a, b
12.3a, b
50
35g
3.2a, b
20
20
33
21
3.6a, b
2.3a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
2.9
Maximum
35
3.8
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 67848
www.vishay.com
S11-0859-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS332DN pdf, 반도체, 판매, 대치품
New Product
SiS332DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
10
TJ = 150 °C
TJ = 25 °C
1
0.04
0.03
ID = 10 A
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.02
0.01
TJ = 125 °C
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.2
0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
80
60
40
20
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
100 μs
1 ms
10 ms
1
Limited by RDS(on)*
0.1
100 ms
1s
10 s
TC = 25 °C
Single Pulse
0.01
0.01 0.1
DC
BVDSS Limited
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67848
4 S11-0859-Rev. A, 02-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SIS332DN 전자부품, 판매, 대치품
PowerPAK® 1212-8, (SINGLE/DUAL)
W
18
45
L1
θθ
Z
2
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.97
A1 0.00
b 0.23
c 0.23
D 3.20
D1 2.95
D2 1.98
D3 0.48
D4
D5
E 3.20
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1 0.35
H 0.30
L 0.30
L1 0.06
θ
W 0.15
M
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
MILLIMETERS
NOM.
1.04
-
0.30
0.28
3.30
3.05
2.11
-
0.47 TYP.
2.3 TYP.
3.30
3.05
1.60
1.85
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.41
0.43
0.13
-
0.25
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
-
0.51
0.56
0.20
12°
0.36
Document Number: 71656
Revison: 03-May-10
Package Information
Vishay Siliconix
H E2 K L
E4
1
2
3
4
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
MIN.
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
E3
Backside View of Dual Pad
INCHES
NOM.
0.041
-
0.012
0.011
0.130
0.120
0.083
-
0.0185 TYP.
0.090 TYP.
0.130
0.120
0.063
0.073
0.013 TYP.
0.026 BSC
0.034 TYP.
-
0.016
0.017
0.005
-
0.010
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
-
0.020
0.022
0.008
12°
0.014
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SIS332DN

N-Channel 30V (D-S) MOSFET

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